0.25 μm AlGaN/GaN HEMT Devices and 9 GHz Power Amplifier

Abstract

This paper describes the successful development and the performance of X-band 50 W pulsed power amplifier using a 50 W GaN-on-SiC high electron mobility transistor. The GaN HEMT with a gate length of 0.25 μm and a total gate width of 12 mm were fabricated. The X-band pulsed power amplifier exhibited an output power of 50 W with a power gain of 6 dB in a frequency range of 9.2～9.5 GHz. It also shows a maximum output power density of 4.16 W/mm. This 50 W GaN HEMT and X-band 50 W pulsed power amplifier are suitable for the radar systems and related applications in X-band.

Design and Implementation of K-Band Electromagnetic Wave Rain Gauge System

“…It also performs the reception function, which includes amplifying the received K-band signal from the antenna, down-converting it, and then sending it to the signal processor. In this paper, we developed a K-band pulse-driven 4 W Solid State Power Amplifiers (SSPA) transceiver using a small Hybrid Microwave Integrated Circuit (HMIC) [10][11][12]. The transceiver comprises a power supply, a transmitter, and a receiver.…”