2018
DOI: 10.3390/s18113763
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0.16 µm–BCD Silicon Photomultipliers with Sharp Timing Response and Reduced Correlated Noise

Abstract: Silicon photomultipliers (SiPMs) have improved significantly over the last years and now are widely employed in many different applications. However, the custom fabrication technologies exploited for commercial SiPMs do not allow the integration of any additional electronics, e.g., on-chip readout and analog (or digital) processing circuitry. In this paper, we present the design and characterization of two microelectronics-compatible SiPMs fabricated in a 0.16 µm–BCD (Bipolar-CMOS-DMOS) technology, with 0.67 m… Show more

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Cited by 6 publications
(5 citation statements)
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“…The miniaturization of a PET system is seriously limited as a result of the large volume and high working voltage of PSPMT. A silicon photomultiplier (SiPM), also referred to as a multi pixel photon counter (MPPC), according to the operation principle, as a new type of semiconductor device, is gradually replacing the PSPMT in a new generation of photodetectors in PET systems [ 13 , 14 , 15 , 16 , 17 ] based on the advantages of high quantum efficiency, high gain, fast time response, low operating voltage, compact structure, and immunity to magnetic fields [ 18 , 19 , 20 ].…”
Section: Introductionmentioning
confidence: 99%
“…The miniaturization of a PET system is seriously limited as a result of the large volume and high working voltage of PSPMT. A silicon photomultiplier (SiPM), also referred to as a multi pixel photon counter (MPPC), according to the operation principle, as a new type of semiconductor device, is gradually replacing the PSPMT in a new generation of photodetectors in PET systems [ 13 , 14 , 15 , 16 , 17 ] based on the advantages of high quantum efficiency, high gain, fast time response, low operating voltage, compact structure, and immunity to magnetic fields [ 18 , 19 , 20 ].…”
Section: Introductionmentioning
confidence: 99%
“…6, cyan and magenta curves). Notwithstanding the presence of deep oxide trenches, crosstalk probability is higher for the 0.16 µm-BCD for multiple reasons: (i) smaller pixel separation, (ii) higher PDE, (iii) higher intensity of the avalanche current and (iv) multiplication region is deeper than the oxide trenches [46]. However the relatively higher crosstalk probability of the 0.16 µm-BCD sensor does not introduce any degradation in the spatial gain resolution (with respect to CLSM) obtained via ISM.…”
Section: Optical Crosstalkmentioning
confidence: 99%
“…For this reason, the charge spectrum is an effective way to show the behavior of an a-SiPM as well as the capability of photon number resolving. In addition, the peak-to-valley ratio also reveals the correlated noise level in the device (i.e., afterpulsing and delayed crosstalk) [10]. The gain of the a-SiPM is estimated by the charge spectrum.…”
Section: B Charge Spectrum Performancementioning
confidence: 99%
“…There exist at least two types of SiPMs: analog SiPMs (a-SiPMs) [7], where the avalanche currents are summed in an analog fashion, and digital SiPMs (d-SiPMs), where the avalanche currents are converted to digital signals and combined using logic trees [8] and each microcell can be masked individually [9]. In an a-SiPM, the output node generates a current proportional to the number of quasi-simultaneously detected photons [7], [10], while a d-SiPM requires additional logic to extract that information, as it is done in a multi-digital SiPM (md-SiPM) [11].…”
Section: Introductionmentioning
confidence: 99%
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