0.1-µm-Gate Metamorphic High-Electron-Mobility Transistor on GaAs and Its Application to Source-Coupled Field-Effect Transistor Logic

Ohshima, Tomoyuki; Moriguchi, Hironobu; Hoshi, Shinichi; Itoh, Makoto; Tsunotani, Masanori; Ichioka, Toshihiko

doi:10.1143/jjap.42.3320

Cited by 1 publication

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“…HEMTs having the same performance as the latticematched ones have been fabricated using a metamorphic buffer layer. [4][5][6] Furthermore, the low-frequency noise performance of the metamorphic HEMTs was found to be comparable to that of the lattice-matched ones. 7) One of the promising high-speed devices for future millimeter and submillimeter wave applications is a resonant tunneling diode (RTD).…”

Section: Introductionmentioning

confidence: 78%

Metamorphic Resonant Tunneling Diodes and Its Application to Chaos Generator ICs

Maezawa¹,

Igarashi²,

Ohno³

et al. 2005

Jpn. J. Appl. Phys.

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In this paper we discuss the properties of InGaAs/AlAs metamorphic resonant tunneling diodes (RTDs) on GaAs substrates. The current–voltage, surface roughness, and low-frequency noise characteristics were investigated to clarify the effect of step-grading buffer layers. No degradation of the current–voltage characteristics were observed despite the large surface roughness due to a lattice mismatch. Moreover, low-frequency noise measurements showed only 1/ f noise without special peak structures, and the amplitudes of which were comparable to those of the lattice-matched ones. Next, we fabricated resonant tunneling frequency divider ICs, which is based on the bifurcation phenomenon in a chaos system, on metamorphic substrates. A maximum operation frequency of 88 GHz and good phase noise properties were obtained, which are similar to those of the lattice-matched ones. These results demonstrate the effectiveness of the step-grading buffer layers even for the RTDs that consist of very thin layers and are sensitive to crystal qualities.

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