Quantum dot (QD) solids represent a new type of condensed matter drawing high fundamental and applied interest. Quantum confinement in individual QDs, combined with macroscopic scale whole materials, leads to novel exciton and charge transfer features that are particularly relevant to optoelectronic applications. This Perspective discusses the structure of semiconductor QD solids, optical and spectral properties, charge carrier transport, and photovoltaic applications. The distance between adjacent nanoparticles and surface ligands influences greatly electrostatic interactions between QDs and, hence, charge and energy transfer. It is almost inevitable that QD solids exhibit energetic disorder that bears many similarities to disordered organic semiconductors, with charge and exciton transport described by the multiple trapping model. QD solids are synthesized at low cost from colloidal solutions by casting, spraying, and printing. A judicious selection of a layer sequence involving QDs with different size, composition, and ligands can be used to harvest sunlight over a wide spectral range, leading to inexpensive and efficient photovoltaic devices.

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Nickel oxide (NiO) is one of the most promising and high-performing Hole Transporting Layer (HTL) in inverted perovskite solar cells due to ideal band alignment with perovskite absorber, wide band gap, and high mobility of charges. At the same time, however, NiO does not provide good contact and trap-free junction for hole collection. In this paper, we examine this problem by developing a double hole transport configuration with a copper iodide (CuI) interlayer for efficient surface passivation. Transient photo-current (TPC) measurements showed that Perovskite/HTL interface with CuI interlayer has an improved hole injection; CuI passivation reduces the concentration of traps and the parasitic charge accumulation that limits the flow of charges. Moreover, we found that CuI protect the HTL/perovskite interface from degradation and consequently improve the stability of the cell. The presence of CuI interlayer induces an improvement of open-circuit voltage VOC (from 1.02 V to 1.07 V), an increase of the shunt resistance RSH (100%), a reduction of the series resistance RS (−30%), and finally a +10% improvement of the solar cell efficiency.