Among van der Waals layered ferromagnets, monolayer vanadium diselenide (VSe2) stands out due to its robust ferromagnetism. However, the exfoliation of monolayer VSe2 is challenging, not least because the monolayer flake is extremely unstable in air. Using an electrochemical exfoliation approach with organic cations as the intercalants, monolayer 1T‐VSe2 flakes are successfully obtained from the bulk crystal at high yield. Thiol molecules are further introduced onto the VSe2 surface to passivate the exfoliated flakes, which improves the air stability of the flakes for subsequent characterizations. Room‐temperature ferromagnetism is confirmed on the exfoliated 2D VSe2 flakes using a superconducting quantum interference device (SQUID), X‐ray magnetic circular dichroism (XMCD), and magnetic force microscopy (MFM), where the monolayer flake displays the strongest ferromagnetic properties. Se vacancies, which can be ubiquitous in such materials, also contribute to the ferromagnetism of VSe2, although density functional theory (DFT) calculations show that such effect can be minimized by physisorbed oxygen molecules or covalently bound thiol molecules.

We apply direct ink writing for the three-dimensional (3D) printing of polyaniline/reduced graphene oxide (PANI/RGO) composites with PANI/graphene oxide (PANI/GO) gel as printable inks. The PANI/GO gel inks for 3D printing are prepared via self-assembly of PANI and GO in a blend solvent of N-methyl-2-pyrrolidinone and water, and offer both shaping capability, self-sustainability, and electrical conductivity after reduction of GO. PANI/RGO interdigital electrodes are fabricated with 3D printing, and based on these electrodes, a planar solid-state supercapacitor is constructed, which exhibits high performance with an areal specific capacitance of 1329 mF cm. The approach developed in this work provides a simple, economic, and effective way to fabricate PANI-based 3D architectures, which leads to promising application in future energy and electric devices at micro-nano scale.

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