We report strong electron-phonon coupling in magic-angle twisted bilayer graphene (MA-TBG) obtained from atomistic description of the system including more than 10 000 atoms in the moiré supercell. Electronic structure, phonon spectrum, and electron-phonon coupling strength λ are obtained before and after atomicposition relaxation both in and out of plane. Obtained λ is very large for MA-TBG, with λ > 1 near the half-filling energies of the flat bands, while it is small (λ ∼ 0.1) for monolayer and unrotated bilayer graphene. Significant electron-hole asymmetry occurs in the electronic structure after atomic-structure relaxation, so λ is much stronger with hole doping than electron doping. Obtained electron-phonon coupling is nearly isotropic and depends very weakly on electronic band and momentum, indicating that electron-phonon coupling prefers single-gap s-wave superconductivity. Relevant phonon energies are much larger than electron energy scale, going far beyond adiabatic limit. Our results provide a fundamental understanding of the electron-phonon interaction in MA-TBG, highlighting that it can contribute to rich physics of the system.
We present atomistic calculations on structural and electronic properties of twisted double bilayer graphene (TDBG) consisting of two sets of rotationally misaligned Bernal-stacked bilayer graphene. Obtained equilibrium atomic structures exhibit in-plane strains and the modulation of the interlayer distances at the rotationally mismatched interface layers. We find that the electronic structure of TDBG can have an intrinsic band gap at the charge neutral point for a large range of the twist angle θ. Near θ = 1.25 • , the intrinsic band gap disappears and TDBG hosts flat bands at the Fermi level that are energetically well separated from higher and lower energy bands. We also show that the flat bands are easily tunable by applying vertical electric fields, and extremely narrow bandwidths less than 10 meV can be achieved for the electron-side flat bands in a wide range of the twist angle. Our results serve as a theoretical guide for exploring emergent correlated electron physics in this versatile moiré superlattice system. arXiv:1903.00852v1 [cond-mat.mes-hall]
We investigate the electromigration forces for weakly bonded adsorbates on graphene by using densityfunctional based calculations. We find that the nature of electromigration forces on an adsorbate critically depends on the energy level alignment between the adsorbate state and the Fermi level of the graphene. For a resonant adsorbate, whose frontier orbitals lie close to the Fermi level, the electromigration force is dominated by the electron wind force that is strongly enhanced along the electron flow direction, irrespective of the sign of the adsorbate charge. For a nonresonant adsorbate, the electromigration force is essentially the direct force that depends on the adsorbate charge. We also show that the magnitude of electromigration forces can be continuously tunable through electrostatic gating for resonant adsorbates. Our results provide new insight for understanding and controlling how nanoscale objects behave in or on host materials.
The application of two-dimensional materials has been expanded by introducing the twisted bilayer (TBL) system. However, the landscape of the interlayer interaction in hetero-TBLs has not yet been fully understood, while that in homo-TBLs has been extensively studied, with the dependence on the twist angle between the constituent layers. Here, we present detailed analyses on the interlayer interaction that depends on the twist angle in WSe 2 /MoSe 2 hetero-TBL via Raman and photoluminescence studies combined with first-principles calculation. We observe interlayer vibrational modes, moiréphonons, and the interlayer excitonic states that evolve with the twist angle and identify different regimes with distinct characteristics of such features. Moreover, the interlayer excitons that appear strong in the hetero-TBLs with twist angles near 0°or 60°have different energies and photoluminescence excitation spectra for the two cases, which results from different electronic structures and carrier relaxation dynamics. These results would enable a better understanding of the interlayer interaction in hetero-TBLs.
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