The CsPbBr3 microwires with unique isosceles right triangle cross-sections are commonly observed via chemical vapor deposition method. In this work, we study the correlations between measured multi-mode lasing behaviors and the simulation of the mode patterns inside the triangular-rod microcavity. We confirm that lasing action with higher-order transverse modes can well sustain, even when these modes experience large optical loss due to the isosceles triangle cross-section. By comparing the experimental and simulation results, the higher-order transverse modes tend to show up prior to the fundamental transverse modes for wider microwires. We attribute this behavior to the nonuniform field distribution caused by the high absorption efficiency of CsPbBr3. We also elaborate on the difficulties to sustain the whispering gallery mode in the CsPbBr3 triangular-rod microcavity, which implies that the lateral dimension and geometry of the cavity should be considered carefully for the future design of low threshold wire-based laser devices.
In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40 o C to 85 o C, is reported for the first time. This reveals the potential application in the TEM sample preparation. The thickness, refractive index, band gap, and depth profiling chemical state of the thin film are analyzed by ellipsometry, X-ray diffraction, and photoelectron spectroscopy respectively. Our TEM image shows a clear boundary between the photo-resist and hafnium dioxide deposited on PR, which indicates the low-temperature atomic layer deposition (ALD) may lead a new way for TEM sample preparation in advanced technology node.
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