Here, we report on the effect of different antisolvent dripping on film morphology and charge recombination of mixed formamidinium–methylammonium tin iodide (FA0.75MA0.25SnI3) as a light absorber in perovskite solar cells. N,N-dimethyl methanamide (DMF) and dimethyl sulfoxide (DMSO) were used as the mixed solvent in the perovskite precursors together with tin fluoride (SnF2) as an additive. Diethyl ether (DE), toluene (TL), and chlorobenzene (CB) were employed as antisolvents for comparison. Our results show that CB as an antisolvent leads to a dense and uniform Sn-based perovskite film. The maximum power conversion efficiency of our Sn-based perovskite solar cell achieves 9.06% (9.02%) under forward (reverse) voltage scan under AM 1.5G 100 mW/cm2 illumination. The encapsulated cells show good long-term stability with ∼75% of their initial efficiency retained over a period of 30 days of storage. Our work suggests the promising potential to further improve the performance of Pb-free Sn-based perovskite solar cells.

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Single-photon emitters based on intrinsic defects in silicon carbide (SiC) are promising as solid-state qubits for the quantum information storage, whereas defect engineering in a controllable manner still remains challenging. Herein, the thermally-driven defect dynamic reaction in the ion implanted 4H-SiC has been exploited through the optical emission spectra of defects. For the heavy-ion (Si or Ar) implanted samples with abundant Frenkel pairs, the silicon vacancies (VSi) are energetically converted into the carbon antisite-vacancy pair (CSi-VC) upon annealing till 1300 °C for 30 min, accompanied with the gradual lattice recovery and local strain relaxation. The further temperature elevation dissociates the metastable CSi-VC into carbon antisite (CSi) and carbon vacancy (VC), as supported by the consequent quenching of the (CSi-VC)-related emission at 700 nm. Thus, the whole defect reaction is probed as the vacancy interconversion from VSi to VC with the byproduct of stacking faults. In contrast, the intermediate CSi-VC complexes are not energetically favorable during the annealing of the H-implanted sample, which results from the negligible generation of Frenkel pairs, as supported by the x-ray diffraction patterns and Raman scattering analysis. These findings provide guidance for defect engineering in SiC toward the creation of reliable single photon emitters.