Understanding the competition between superconductivity and other ordered states (such as antiferromagnetic or charge-density-wave (CDW) state) is a central issue in condensed matter physics. The recently discovered layered kagome metal AV3Sb5 (A = K, Rb, and Cs) provides us a new playground to study the interplay of superconductivity and CDW state by involving nontrivial topology of band structures. Here, we conduct high-pressure electrical transport and magnetic susceptibility measurements to study CsV3Sb5 with the highest Tc of 2.7 K in AV3Sb5 family. While the CDW transition is monotonically suppressed by pressure, superconductivity is enhanced with increasing pressure up to P1 ≈ 0.7 GPa, then an unexpected suppression on superconductivity happens until pressure around 1.1 GPa, after that, Tc is enhanced with increasing pressure again. The CDW is completely suppressed at a critical pressure P2 ≈ 2 GPa together with a maximum Tc of about 8 K. In contrast to a common dome-like behavior, the pressure-dependent Tc shows an unexpected double-peak behavior. The unusual suppression of Tc at P1 is concomitant with the rapidly damping of quantum oscillations, sudden enhancement of the residual resistivity and rapid decrease of magnetoresistance. Our discoveries indicate an unusual competition between superconductivity and CDW state in pressurized kagome lattice.

Polymeric fibres with small radii (such as ≤125 nm) are delicate to handle and should be laid down on a solid substrate to obtain practical devices. However, placing these nanofibres on commonly used glass substrates prevents them from guiding light. In this study, we numerically and experimentally demonstrate that when the nanofibre is placed on a suitable dielectric multilayer, it supports a guided mode, a Bloch surface wave (BSW) confined in one dimension. The physical origin of this new mode is discussed in comparison with the typical two-dimensional BSW mode. Polymeric nanofibres are easily fabricated to contain fluorophores, which make the dielectric nanofibre and multilayer configuration suitable for developing a large range of new nanometric scale devices, such as processor–memory interconnections, devices with sensitivity to target analytes, incident polarization and multi-colour BSW modes.

Homojunctions comprised of transition-metal dichalcogenides (TMD) polymorphs are attractive building blocks for next-generation two-dimensional (2D) electronic circuitry. However, the synthesis of such homojunctions, which usually involves elaborate manipulation at the nanoscale, still remains a great challenge. Herein, we demonstrated a solution-processing strategy to successfully harvest lateral semiconductor–metal homojunctions with high yield. Specially, through precisely controlled lithiation process, precursors of polymorphic crystal arranged with 1T–2H domains were successfully achieved. A programmed exfoliation procedure was further employed to orderly laminate each phase in the polymorphic crystal, thus leading to 1T–2H TMD homojunction monolayers with sizes up to tens of micrometers. Moreover, the atomically sharp boundaries and superior band alignment improved the device on the basis of the semiconductor–metal homojunction with 50% decrease of electric field strength required in the derivation of state transition. We anticipate that solution processing based on programmed exfoliation would be a powerful tool to produce new configurations of 2D nanomaterials.