Perovskite solar cells (PSCs) longevity is nowadays the bottleneck for their full commercial exploitation. Although lot of research is ongoing, the initial decay of the output power – an effect known as “burn‐in” degradation happening in the first 100 h – is still unavoidable, significantly reducing the overall performance (typically of >20%). In this paper, the origin of the “burn‐in” degradation in n‐i‐p type PSCs is demonstrated that is directly related to Li+ ions migration coming from the SnO2 electron transporting layer visualized by time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) measurements. To block the ion movement, a thin cross‐linked [6,6]‐phenyl‐C61‐butyric acid methyl ester layer on top of the SnO2 layer is introduced, resulting in Li+ immobilization. This results in the elimination of the “burn‐in” degradation, showing for the first time a zero “burn‐in” loss in the performances while boosting device power conversion efficiency to >22% for triple‐cation‐based PSCs and >24% for formamidinium‐based (FAPbI3) PSCs, proving the general validity of this approach and creating a new framework for the realization of stable PSCs devices.
The levelized cost of electricity (LCOE) is a techno-economic analysis that evaluates the cost potential of any electricity-producing technology. LCOE represents a powerful metric to compare the most efficient renewable...
Defect‐mediated recombination losses limit the open‐circuit voltage (VOC) of perovskite solar cells (PSCs), negatively affecting the device's performance. Bulk and dimensional engineering have both been reported as promising strategies to passivate shallow defects, thus improving the photovoltaic conversion efficiency (PCE). Here, a combined bulk and surface treatment employing chlorine‐based compounds is employed. Methylammonium chloride (MACl) is used as a bulk additive, while 4‐methylphenethylammonium chloride (MePEACl) is deposited onto the perovskite surface to produce a low‐dimensional perovskite (LDP) and reduce nonradiative recombination. Through structural and morphological investigations, it can be confirmed that bulk and surface doping have a beneficial effect on the film morphology and its overall quality, while electroluminescence (EL) and photoluminescence (PL) analyses demonstrate an increased and more homogeneous emission. Applying this double passivation strategy in PSC fabrication, a boost is observed in both the short‐circuit current density and the VOC of the devices, achieving a champion 21.4% PCE while improving device stability.
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