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We present the results of growth of CdTe layer on (013)GaAs substrate. The sequence processes include the preparation of GaAs surface by chemical etching and annealing in ultra-high vacuum, the growth of ZnTe layer on atomically clean GaAs surface and then the growth of CdTe layer on ZnTe/GaAs. All processes were carried out without removing GaAs substrate from MBE set. The processes were controlled by RHEED and single wavelength ellipsometry. We found that the evaporation of arsenic oxides and gallium oxides from the (001)GaAs surface were observed at over 400 and 500°C, respectively. The growth of CdTe on (001) GaAs leads to appearance of mixture orientations because of large mismatch of lattice parameters. We study the growth of ZnTe on (001)GaAs and (013)GaAs substrates to prevent the growth of mixture orientations. We study the influence of cadmium and tellurium ratio in molecular fluxes and temperature on the growth mechanism of ZnTe and CdTe, crystal perfection, surface roughness and defects density. The optimal condition for growth of high quality thick CdTe on GaAs substrate were found.

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