No abstract

We introduce a new method to continuously map inhomogeneities of a moiré lattice and apply it to open-device twisted bilayer graphene (TBG). We show that the variation in the twist angle, which is frequently conjectured to be the reason for differences between devices with a supposed similar twist angle, is about 0.04° over areas of several hundred nm, comparable to devices encapsulated between hBN slabs. We distinguish between an effective twist angle and local anisotropy and relate the latter to heterostrain. Our results suggest that the lack of evidence for superconductivity in open devices is not a consequence of higher heterogeneity in the twist angle, but possibly due to the absence of interaction with a top hBN layer. Furthermore, our results imply that for our devices, twist angle heterogeneity has a roughly equal effect to the electronic structure as local strain. The method introduced here is applicable to results from different imaging techniques, and on different moiré materials.

In ‘magic angle’ twisted bilayer graphene (TBG) a flat band forms, yielding correlated insulator behavior and superconductivity. In general, the moiré structure in TBG varies spatially, influencing the overall conductance properties of devices. Hence, to understand the wide variety of phase diagrams observed, a detailed understanding of local variations is needed. Here, we study spatial and temporal variations of the moiré pattern in TBG using aberration-corrected Low Energy Electron Microscopy (AC-LEEM). We find a smaller spatial variation than reported previously. Furthermore, we observe thermal fluctuations corresponding to collective atomic displacements over 70 pm on a timescale of seconds. Remarkably, no untwisting is found up to 600 ∘C. We conclude that thermal annealing can be used to decrease local disorder. Finally, we observe edge dislocations in the underlying atomic lattice, the moiré structure acting as a magnifying glass. These topological defects are anticipated to exhibit unique local electronic properties.

Conventional scanning tunneling microscopy (STM) is limited to a bandwidth of circa 1kHz around DC. Here, we develop, build and test a novel amplifier circuit capable of measuring the tunneling current in the MHz regime while simultaneously performing conventional STM measurements. This is achieved with an amplifier circuit including a LC tank with a quality factor exceeding 600 and a home-built, low-noise high electron mobility transistor (HEMT). The amplifier circuit functions while simultaneously scanning with atomic resolution in the tunneling regime, i.e. at junction resistances in the range of giga-ohms, and down towards point contact spectroscopy. To enable high signal-to-noise and meet all technical requirements for the inclusion in a commercial low temperature, ultra-high vacuum STM, we use superconducting cross-wound inductors and choose materials and circuit elements with low heat load. We demonstrate the high performance of the amplifier by spatially mapping the Poissonian noise of tunneling electrons on an atomically clean Au(111) surface. We also show differential conductance spectroscopy measurements at 3MHz, demonstrating superior performance over conventional spectroscopy techniques. Further, our technology could be used to perform impedance matched spin resonance and distinguish Majorana modes from more conventional edge states.

The electronic properties of cuprate high temperature superconductors in their normal state are very two-dimensional: while transport in the ab plane is perfectly metallic, it is insulating along the c-axis, with ratios between the two exceeding 10 4 . [1][2][3][4] This anisotropy has been identified as one of the mysteries of the cuprates early on 5-7 , and while widely different proposals exist for its microscopic origin 5,8-10 , little is known empirically on the microscopic scale. Here, we elucidate the properties of the insulating layers with a newly developed scanning noise spectroscopy technique that can spatially map not only the current but also the current fluctuations in time. We discover atomic-scale noise centers that exhibit MHz current fluctuations 40 times the expectation from Poissonian noise, more than what has been observed in mesoscopic systems. 11 Such behaviour can only happen in highly polarizable insulators and represents strong evidence for trapping of charge in the charge reservoir layers. Our measurements suggest a picture of metallic layers separated by polarizable insulators within a three-dimensional superconducting state.