We analyze the dynamics of fast electrons in plasmas containing partially ionized impurity atoms, where the screening effect of bound electrons must be included. We derive analytical expressions for the deflection and slowing-down frequencies, and show that they are increased significantly compared to the results obtained with complete screening, already at sub-relativistic electron energies. Furthermore, we show that the modifications to the deflection and slowing down frequencies are of equal importance in describing the runaway current evolution. Our results greatly affect fastelectron dynamics and have important implications, e.g. for the efficacy of mitigation strategies for runaway electrons in tokamak devices, and energy loss during relativistic breakdown in atmospheric discharges.Introduction.-Fast electrons, having speeds well above the thermal speed of the bulk plasma population, are ubiquitous in space and laboratory plasmas. An important process leading to such high-energy electrons is the runaway mechanism. Runaway electrons can be produced in the presence of an accelerating electric field if it exceeds the critical value E c = n e e 3 ln Λ 0 /4πǫ

Accurate modelling of the interaction between fast electrons and partially ionized atoms is important for evaluating tokamak disruption mitigation schemes based on material injection. This requires accounting for the effect of screening of the impurity nuclei by the cloud of bound electrons. In this paper, we generalize the Fokker-Planck operator in a fully ionized plasma by accounting for the effect of screening. We detail the derivation of this generalized operator, and calculate the effective ion length-scales, which are needed in the components of the collision operator, for a number of ion species commonly appearing in fusion experiments. We show that for high electric fields, the secondary runaway growth rate can be substantially larger than in a fully ionized plasma with the same effective charge, although the growth rate is significantly reduced at near-critical electric fields. Furthermore, by comparison with the Boltzmann collision operator, we show that the Fokker-Planck formalism is accurate even for large impurity content. † Email address for correspondence: hesslow@chalmers.se

SUMMARYInnovation platforms are fast becoming part of the mantra of agricultural research for development projects and programmes. Their basic tenet is that stakeholders depend on one another to achieve agricultural development outcomes, and hence need a space where they can learn, negotiate and coordinate to overcome challenges and capture opportunities through a facilitated innovation process. Although much has been written on how to implement and facilitate innovation platforms efficiently, few studies support ex-ante appraisal of when and for what purpose innovation platforms provide an appropriate mechanism for achieving development outcomes, and what kinds of human and financial resource investments and enabling environments are required. Without these insights, innovation platforms run the risk of being promoted as a panacea for all problems in the agricultural sector. This study makes clear that not all constraints will require innovation platforms and, if there is a simpler and cheaper ‡ Corresponding author.

One of the key problems facing superconducting qubits and other Josephson junction devices is the decohering effects of bistable material defects. Although a variety of phenomenological models exist, the true microscopic origin of these defects remains elusive. For the first time we show that these defects may arise from delocalization of the atomic position of the oxygen in the oxide forming the Josephson junction barrier. Using a microscopic model, we compute experimentally observable parameters for phase qubits. Such defects are charge neutral but have nonzero response to both applied electric field and strain. This may explain the observed long coherence time of two-level defects in the presence of charge noise, while still coupling to the junction electric field and substrate phonons.