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The charge‐transport properties of the spiro‐linked compounds 2,2′,7,7′‐tetrakis(diphenylamino)‐9,9′‐spirobifluorene, 2,2′,7,7′‐tetrakis(N,N′‐di‐p‐methylphenylamino)‐9,9′‐spirobifluorene, 2,2′,7,7′‐tetra(m‐tolyl‐phenylamino)‐9,9′‐spirobifluorene, and 2,2′,7,7′‐tetra(N‐phenyl‐1‐naphthylamine)‐9,9′‐spirobifluorene, and their corresponding parent compounds, N,N,N′,N′‐tetraphenylbenzidine, N,N,N′,N′‐tetrakis(4‐methylphenyl)benzidine, and N,N′‐bis(3‐methylphenyl)‐(1,1′‐biphenyl)‐4,4′‐diamine, N,N′‐diphenyl‐N,N′‐bis(1‐naphthyl)‐1,1′‐biphenyl‐4,4′‐diamine, are investigated. The field‐effect mobilities of charge carriers in thin films of the parent compounds are slightly higher than those of the spiro‐linked compounds. However, the transistor action of the parent‐compound thin films vanishes because the films crystallize after being stored in ambient atmosphere for a few days. In contrast, the hole mobilities in thin films of the spiro‐linked compounds do not change significantly after the samples are stored in ambient atmosphere for up to nine months. Also discussed is the temperature dependency of the mobilities of charge carriers, which is presented using two models, namely the Arrhenius and the Gaussian disorder models.

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We report on organic semiconductor lasers based on spiro-terphenyl as active gain medium in a second-order distributed feedback (DFB) structure. In contrast to neat p-terphenyl, the spiro-linked compound forms vitreous amorphous films—an essential prerequisite for low loss laser structures. Spiro-terphenyl shows amplified spontaneous emission in the ultraviolet part of the spectrum at 381 nm. Thin-film lasers with DFB grating periods between 200 and 230 nm exhibit emission wavelengths between 361.9 and 393.8 nm. The minimum threshold energy density under optical pumping is as low as 8.9μJ∕cm2 (383 nm). Therefore, the novel spiro-linked compound paves the way for low-threshold, widely tunable organic semiconductor lasers advancing into the ultraviolet spectral region.