ZnO is a promising high figure-of-merit (ZT) thermoelectric material for power harvesting from heat due to its high melting point, high electrical conductivity σ, and Seebeck coefficient α, but its practical use is limited by a high lattice thermal conductivity κ(L). Here, we report Al-containing ZnO nanocomposites with up to a factor of 20 lower κ(L) than non-nanostructured ZnO, while retaining bulklike α and σ. We show that enhanced phonon scattering promoted by Al-induced grain refinement and ZnAl(2)O(4) nanoprecipitates presages ultralow κ ∼ 2 Wm( -1) K(-1) at 1000 K. The high α∼ -300 μV K(-1) and high σ ∼ 1-10(4) Ω(-1 )m(-1) result from an offsetting of the nanostructuring-induced mobility decrease by high, and nondegenerate, carrier concentrations obtained via excitation from shallow Al donor states. The resultant ZT ∼ 0.44 at 1000 K is 50% higher than that for the best non-nanostructured counterpart material at the same temperature and holds promise for engineering advanced oxide-based high-ZT thermoelectrics for applications.

Antimony selenide is a promising thermoelectric material with a high Seebeck coefficient, but its figure of merit is limited by its low electrical conductivity. Here, we report a rapid and scalable (gram-a-minute) microwave synthesis of one-dimensional nanocrystals of sulfurized antimony selenide that exhibit 10(4)-10(10) times higher electrical conductivity than non-nanostructured bulk or thin film forms of this material. As the nanocrystal diameter increases, the nanowires transform into nanotubes through void formation and coalescence driven by axial rejection of sulfur incorporated into the nanowires from the surfactant used in our synthesis. Individual nanowires and nanotubes exhibit a charge carrier transport activation-energy of <60 meV arising from surface sulfur donor states. Nanocrystal assemblies also show high electrical conductivity, making the nanocrystals attractive building blocks to realize nanostructured thin film and bulk forms of this material for thermoelectric device applications.

Realizing high thermal conductivity nanocomposites is a challenge because of difficulties in incorporating high fractions of uniformly dispersed nanofillers and countering low filler-matrix interfacial conductance. Here, we obviate these issues by using &lt;3 vol. % gold nanowire fillers to obtain a 30-fold increase in polydimethylsiloxane thermal conductivity that is 6-fold higher than any nanocomposite at low nanofiller loadings and exceeds theoretical predictions. The nanowire diameter and aspect ratio are keys to obtaining cold-welded networks that enhance thermal conductivity while fostering low modulus and electrical conductivity. Such nanowire nanocomposites are attractive for many applications in electronics, packaging, and energy devices.

Chalcogenide nanostructures offer promise for obtaining nanomaterials with high electrical conductivity, low thermal conductivity, and high Seebeck coefficient. Here, we demonstrate a new approach of tuning the Seebeck coefficient of nanoplate assemblies of single-crystal pnictogen chalcogenides by heterostructuring the nanoplates with tellurium nanocrystals. We synthesized bismuth telluride and antimony telluride nanoplates decorated with tellurium nanorods and nanofins using a rapid, scalable, microwave-stimulated organic surfactant-directed technique. Heterostructuring permits two- to three-fold factorial tuning of the Seebeck coefficient, and yields a 40% higher value than the highest reported for bulk antimony telluride. Microscopy and spectroscopy analyses of the nanostructures suggest that Seebeck tunability arises from carrier-energy filtration effects at the Te-chalcogenide heterointerfaces. Our approach of heterostructuring nanoscale building blocks is attractive for realizing high figure-of-merit thermoelectric nanomaterials.

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