Well aligned crystalline zinc oxide (ZnO) nanowires (NWs) on ZnO/Au/Ti/Si substrates were grown by so-called “hydrothermal synthesis”. ZnO seed layers with different thicknesses ranging from 5 to 100 nm, achieved by controlling the deposition time, were prepared by radio-frequency sputtering, followed by a post-annealing treatment in air at 400 °C. The effects of deposition time and annealing treatment of ZnO seed layers on the subsequent growth of ZnO NWs were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). The experimental results reveal that the quality and growth behaviors of ZnO NWs are strongly dependent on both the thickness and the heat treatment of the ZnO seed layers. This work is an optimization step of an easy, cost-effective, and industrially scalable process flow recently developed for the fabrication of a high performance, nanocomposite-based stretchable nanogenerator (SNG) on polydimethylsiloxane (PDMS) substrate. The morphological improvement of hydrothermally grown ZnO NWs may therefore lead to higher performance SNGs for the targeted application of mechanical energy harvesting, in order to supply flexible and wearable electronics.

Flexible piezoelectric nanogenerators (PENGs) are very attractive for mechanical energy harvesting due to their high potential for realizing self-powered sensors and low-power electronics. In this paper, a PENG that is based on zinc oxide (ZnO) nanowires (NWs) is fabricated on flexible and transparent Polydimethylsiloxane (PDMS) substrate. The ZnO NWs were deposited on two different seed layer structures, i.e., gold (Au)/ZnO and tin-doped indium-oxide (ITO)/ZnO, using hydrothermal synthesis. Along with the structural and morphological analyses of ZnO NWs, the electrical characterization was also investigated for ZnO NWs-based flexible PENGs. In order to evaluate the suitability of the PENG device structure, the electrical output performance was studied. By applying a periodic mechanical force of 3 N, the ZnO NWs-based flexible PENG generated a maximum root mean square (RMS) voltage and average power of 2.7 V and 64 nW, respectively. Moreover, the comparison between the fabricated device performances shows that a higher electrical output can be obtained when ITO/ZnO seed layer structure is adopted. The proposed ZnO NWs-based PENG structure can provide a flexible and cost-effective device for supplying portable electronics.