We systematically investigate the influence of high pressure on the electronic transport properties of layered ferromagnetic materials, in particular, those of Fe3GeTe2. Its crystal sustains a hexagonal phase under high pressures up to 25.9 GPa, while the Curie temperature decreases monotonously with the increasing pressure. By applying appropriate pressures, the experimentally measured anomalous Hall conductivity, σ A xy , can be efficiently controlled. Our theoretical study reveals that this finding can be attributed to the shift of the spin-orbit-coupling-induced splitting bands of Fe atoms. With loading compression, σ A xy reaches its maximal value when the Fermi level lies inside the splitting bands and then attenuates when the splitting bands float above the Fermi level. Further compression leads to a prominent suppression of the magnetic moment, which is another physical cause of the decrease in σ A xy at high pressure. These results indicate that the application of pressure is an effective approach in controlling the anomalous Hall conductivity of layered magnetic materials, which elucidates the physical mechanism of the large intrinsic anomalous Hall effect.Introduction-. Anomalous Hall effect has been one of the most attractive but unsolved topics within the condensed matter community ever since its experimental discovery [1]. In general, anomalous Hall effect is closely related to the material magnetization, and its fundamental origin in different materials is debatable: it is commonly rationalized as being extrinsic disorder-induced effects (e.g., skew-scattering and side jump) or intrinsic Berry-phase effect [2][3][4][5][6][7]. Nevertheless, new types of anomalous Hall effects in material systems besides those in ferromagnetic materials (i.e., topological Hall effect in non-collinear antiferromagnetic materials [2-5] and giant anomalous Hall effect in magnetic semimetals [6,7]) continually update our understanding of such a striking but unclear electronic transport phenomenon. Noteworthily, in these materials, the anomalous Hall effect is not simply related to the magnetization that breaks timereversal symmetry; thus, the effect cannot be understood from conventional formation mechanisms. An increasing number of studies have demonstrated that the anomalous Hall effect is intimately connected with the intrinsic Berry-phase effect from spin-orbit couplings. Recent works [1,8] illustrate that anomalous Hall conductivity σ A xy is dominated by σ skew
The discovery of quantum Hall effect in two-dimensional (2D) electronic systems inspired the topological classifications of electronic systems 1,2 . By stacking 2D quantum Hall effects with interlayer coupling much weaker than the Landau level spacing, quasi-2D quantum Hall effects have been experimentally observed 3~7 , due to the similar physical origin of the 2D counterpart. Recently, in a real 3D electronic gas system where the interlayer coupling is much stronger than the Landau level spacing, 3D quantum Hall effect has been observed in ZrTe5 8 . In this Letter, we report the electronic transport features of its sister bulk material, i.e., HfTe5, under external magnetic field. We observe a series of plateaus in Hall resistance ρxy as magnetic field increases until it reaches the quantum limit at 1~2 Tesla. At the plateau regions, the longitudinal resistance ρxx exhibits local
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.