Existence of Zn-As and Ga-Se interfacial layers were suggested by transmission electron microscopy in Zn treated and Se treated or reacted ZnSe/GaAs interfaces, respectively. High densities of As precipitates and Shockley partials were introduced in films with Zn treatment on a c(4×4) As-rich GaAs surface. In addition, high densities of vacancies and Shockley partials were obtained in samples with a Se-reacted ZnSe/GaAs interface. Formation of the Shockley partials may originate from the stacking errors induced by disordering of Zn- or Ga-interstitials on the GaAs surface.
Zn2SiO4:Mn2+ nanocrystals were grown
in an oxidized porous silicon layer using a chemical
impregnation method. Apparently two classes of samples have
been obtained. One is characterized by the formation of α-phase zinc silicate crystalline particles, which show green
luminescence, and the other one is characterized by β-phase particles, showing yellow luminescence. It was found
that in general prolonged annealing, as well as a high degree of
impregnation leads to the formation of green-luminescent
samples. The decay time of both yellow and green luminescence
decreases with the concentration of Mn activator, while
generally the decay time of yellow luminescence is considerably
larger than that of green luminescence.
Thin ZnSe films were grown by molecular beam epitaxy on Zn exposed (2×4) As-stabilized surfaces of GaAs epilayers under varied beam flux ratios. A very low density of faulted defects in the range of ∼ 104/cm2 was generated in samples grown under a condition with a mixture of both (2×1) and weak c(2×2) surface reconstructions at the initial stages of growth. However, an asymmetric distribution on the densities of extrinsic cation- and anion-terminated Shockley-type stacking faults were generated, respectively, in samples grown under Zn- and Se-rich surface stoichiometries.
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