Many efforts have been made towards improving perovskite (PVK) solar cell stability, but their thermal stability, particularly at 85 °C (IEC 61646 climate chamber tests), remains a challenge. Outdoors, the installed solar cell temperature can reach up to 85 °C, especially in desert regions, providing sufficient motivation to study the effect of temperature stress at or above this temperature (e.g., 100 °C) to confirm the commercial viability of PVK solar cells for industrial companies. In this work, a three-layer printable HTM-free CH NH PbI PVK solar cell with a mesoporous carbon back contact and UV-curable sealant was fabricated and tested for thermal stability over 1500 h at 100 °C. Interestingly, the position of the UV-curing glue was found to drastically affect the device stability. The side-sealed cells show high PCE stability and represent a large step toward commercialization of next generation organic-inorganic lead halide PVK solar cells.

Tin-doped indium oxide (ITO) sputtering is known as a damaging cause on organic hole transporting material in solar cells. In order to gain more insights into the reasons for poor device performance of perovskite solar cells by the ITO sputtering on Spiro-OMeTAD, here we present an in-depth study by I−V simulation analysis using corresponding equivalent circuit models. First, experimental I−V data were obtained for the perovskite solar cells with ⟨FTO/TiO 2 (dense)/ TiO 2 (mesoporous)/CH 3 NH 3 PbI 3 /Spiro-OMeTAD/ITO/Au⟩ configuration. An Au layer (t = 50 nm) was deposited on the ITO as a contact layer. The simulation studies indicated that sputtering of ITO onto Spiro-OMeTAD introduced a reverse Schottky diode and an additional diode to the device that could be relating the sputtering damage of the Spiro-OMeTAD layer. By considering the parameter of the reverse diode element as a function of sputtering time, it was found that the barrier height of the reverse Schottky diode was enhanced by the sputtering damage against Spiro-OMeTAD, which could be the key reason for the reduced fill factor of the devices.

Nanocrystalline TiO2 photoanodes were prepared on a conductive indium–tin oxide coated polyethylene naphthalate (ITO-PEN) plastic substrate by the doctor-blade method to fabricate flexible dye-sensitized solar cells (DSCs). The surface of the photoanode was coated with Mg(OH)2 by electrodeposition and the deposition time was systematically varied (2, 4, 6, 8, and 10 min). Electrodeposited Mg(OH)2 was confirmed by IR and energy dispersive X-ray (EDX) analysis. The surface morphology was studied by scanning electron microscopy. The internal surface area of TiO2 was studied against the deposition time by taking into account the projected surface area of the photoelectrode and it shows that the internal surface area of the photoelectrode was reduced as the Mg(OH)2 deposition time increased. The performance of flexible DSCs on various deposition times of Mg(OH)2 was evaluated on the basis of their photocurrent density–voltage characteristics. Among the deposition times, 2 min showed the best performance in V oc on a treated flexible DSC, with resulting 847 mV and a photocurrent density of 7.13 mA/cm2, providing an overall light-to-electricity conversion efficiency of 4.01%. This photovoltage is among the highest attained for a flexible DSC to date. This notable increment in V oc at a thin layer of Mg(OH)2 was attributed to the suppression of recombination of photogenerated electrons via the exposed surface of ITO as well as TiO2 without influencing the internal surface area of the photoanode significantly.