We report the growth process and linear and nonlinear
optical characterization
of high quality improvised semiorganic 2A5NPDP single crystal using
the modified SR method for the first time. The major difficulties
for the growth of 2A5NPDP single crystal have been resolved with the
aid of a temperature lowering method. After optimization of the growth
conditions, a transparent 2A5NPDP single crystal was harvested with
a size of 85 mm length and 10 mm diameter over a period of 60 days.
The growth rate of the modified SR method grown crystal was found
to be 10 times higher than that of the conventional slow evaporation
solution technique (SEST) grown crystal. The unit cell parameters
of the grown crystal were ascertained by the single crystal X-ray
diffraction (SXRD) and powder X-ray diffraction (PXRD) techniques.
The high crystalline perfection of the crystal was ascertained by
using a high-resolution X-ray diffraction (HRXRD) technique. The presence
of multifarious functional groups of the 2A5NPDP crystal were confirmed
by Fourier transform infrared (FT-IR) and Fourier transform Raman
(FT-Raman) spectral analyses. The thermal property was assessed by
the thermogravimetric (TG) and differential thermal analysis (DTA).
It shows that the grown crystal withstands temperature up to 175 °C.
UV–vis–NIR analysis was used to measure the linear optical
property while third-order nonlinear optical properties were ascertained
using Z-scan and optical limiting (OL) techniques.
The optical limiting threshold of conventional method grown crystal
is 5.7 mW/cm2, whereas the modified SR method grown crystal
is 4.7 mW/cm2. Low value of limiting threshold indicates
that the grown crystal has minimum defects. Finally, 800 nm wavelength
of 140 fs at 80 MHz repetition rate obtained from a Ti:sapphire oscillator
was used for the terahertz (THz) generation between 0.1 and 2.1 THz
range. The efficiency of the generated THz signal was measured using
another 800 nm wavelength of 40 fs, at 1 kHz repetition rate obtained
from a Ti:sapphire amplifier. The generated THz signal is separated
out from unconverted 800 nm using Teflon filters, and power is measured
using a pyrometer. The maximum conversion efficiency of generated
THz signal is on the order of 0.63 × 10–5%.
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