The interdot correlation in a single pair of InAs∕GaAs barrier-coupled quantum dots (QDs) is investigated by microphotoluminescence spectroscopy, in which each QD is individually excited at unique energy levels. Surprisingly, we observe an anomalous increase in the luminescence intensity when the two QDs are excited simultaneously. This remarkable finding can be interpreted in terms of the electromagnetic coupling between QDs with thick barrier layers.
We propose and experimentally investigate an exciton molecule consisting of two different excitons in coupled quantum dots (QDs). Quantum mechanical coupling between double QDs leads to the creation of bonding and antibonding states and should yield an exciton molecule consisting of two excitons that originate from these two states. We prepared a quantum mechanically coupled QD system and succeeded in observing a single exciton molecule in a single pair of coupled QDs by means of a two-color excitation photoluminescence measurement.
We investigated the optical properties of an exciton and a charged exciton in an InAs/GaAs single quantum dot (QD) with truncated pyramidal shape by microspectroscopy, and clarified the difference of sub-band structure between the exciton and the charged exciton in the same single QD. We observed the exciton population of the excited states by monitoring the luminescence of the ground state exciton and succeeded in the experimental demonstration of Rabi oscillation of the exciton and the charged exciton. The transition dipole moments estimated from experimental results in a pure InAs QD are 32 and 40 D for the charged exciton and exciton, respectively, which were comparable to those in InGaAs QD.
Correlated photon emission from a thick barrier coupled quantum dot (QD) has been observed by using selective two-color excitation spectroscopy and second-order photon correlation spectroscopy. Surprisingly, the carrier creation in both QDs induced an anomalous increase in the luminescence intensity, and furthermore the cross photon correlation spectrum between two QDs exhibited photon antibunching with a long recovery time. These significant findings can be interpreted in terms of the electromagnetic interaction between QDs with a thick barrier layer.
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