We discuss the ultraviolet (UV) photo-field effects in amorphous InGaZnO 4 thin-film transistors (a-IGZO TFTs) compared with those in hydrogenated amorphous silicon (a-Si:H) TFTs. It is shown that the UV illumination induces a much more significant threshold voltage (V t ) decrease and OFF-current increase for the a-IGZO TFTs than for the a-Si:H TFTs. The significant V t decrease is found to take several tens of min to return to the initial state after switching off the UV light. A qualitative model is introduced to explain the photoresponse unique to the a-IGZO TFTs.
The transfer characteristics of amorphous InGaZnO 4 thin-film transistors (a-IGZO TFTs) were measured at temperatures ranging from 298 to 523 K in order to analyze the behavior of the above-threshold (ON state) and subthreshold regions. For comparison, the transfer characteristics of a hydrogenated amorphous silicon TFT (a-Si:H TFT) were measured in the same temperature range. We developed a simple analytical model that relates the threshold voltage (V t ) decrease due to increasing temperature to the formation of point defects in a-IGZO. It is well known that the formation of point defects results in the generation of free carriers in oxide semiconductors. Incorporating the analytical model with the experimental transfer characteristics data taken at high temperatures over 423 K, we estimated the formation energy to be approximately 1.05 eV. The V t decrease because of the generation of point defects is peculiar to a-IGZO TFTs, which is not observed in a-Si:H TFTs. The results for the ON-current activation energy suggested that the density of tail states for a-IGZO is much lower than that for a-Si:H. #
To investigate whether the regulation of abscisic acid (ABA) content was related to germinability during grain development, two cDNAs for 9-cis-epoxycarotenoid dioxygenase (HvNCED1 and HvNCED2) and one cDNA for ABA 8'-hydroxylase (HvCYP707A1), which are enzymes thought to catalyse key regulatory steps in ABA biosynthesis and catabolism, respectively, were cloned from barley (Hordeum vulgare L.). Expression and ABA-quantification analysis in embryo revealed that HvNCED2 is responsible for a significant increase in ABA levels during the early to middle stages of grain development, and HvCYP707A1 is responsible for a rapid decrease in ABA level thereafter. The change in the embryonic ABA content of imbibing grains following dormancy release is likely to reflect changes in the expression patterns of HvNCEDs and HvCYP707A1. A major change between dormant and after-ripened grains occurred in HvCYP707A1; the increased expression of HvCYP707A1 in response to imbibition, followed by a rapid ABA decrease and a high germination percentage, was observed in the after-ripened grains, but not in the dormant grains. Under field conditions, HvNCED2 showed the same expression level and pattern during grain development in 2002, 2003, and 2004, indicating that HvNCED2 expression is regulated in a growth-dependent manner in the grains. By contrast, HvNCED1 and HvCYP707A1 showed a different expression pattern in each year, indicating that the expression of these genes is affected by environmental conditions during grain development. The varied expression levels of these genes during grain development and imbibition, which would have effects on the activity of ABA biosynthesis and catabolism, might be reflected, in part, in the germinability in field-grown barley.
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