Accounting for the perovskite ionic transport and reactions reveals the importance of the electron blocking (hole transporting) layer in determining device stability.
The mixed ionic–electronic
nature of lead halide
perovskites
makes their performance in solar cells complex in nature. Ion migration
is often associated with negative impacts—such as hysteresis
or device degradation—leading to significant efforts to suppress
ionic movement in perovskite solar cells. In this work, we demonstrate
that ion trapping at the perovskite/electron transport layer interface
induces band bending, thus increasing the built-in potential and open-circuit
voltage of the device. Quantum chemical calculations reveal that iodine
interstitials are stabilized at that interface, effectively trapping
them at a remarkably high density of ∼10
21
cm
–3
which causes the band bending. Despite the presence
of this high density of ionic defects, the electronic structure calculations
show no sub-band-gap states (electronic traps) are formed due to a
pronounced perovskite lattice reorganization. Our work demonstrates
that ionic traps can have a positive impact on device performance
of perovskite solar cells.
Ion migration into blocking layers toward the metallic electrodes is studied within a semiconductor device model framework. We find that ion leakage into the blocking layers and their accumulation at the electrode interface are significantly affected by the electronic injection barrier at the contact. Specifically, we find that if the device structure promotes, under light, hole (electron) accumulation within the perovskite layer, these excess holes (electrons) would release an almost equivalent number of cations (anions) into the transport layers toward the contacts. Our analysis suggests that it would be beneficial to include intentional doping of the blocking layers and that it should follow the “just enough” strategy.
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