The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN templates with the same LED structure. One on thin GaN template (∼2μm) with high dislocation density [low (109cm−2)] grown by metal-organic vapor-phase epitaxy (sample A) and the other on thick GaN template (∼20μm) with comparatively low dislocation density [high (108cm−2)] by hydride vapor-phase epitaxy (sample B). In order to understand the mechanism of leakage current in LEDs, the correlation between current-voltage characteristics and etch pit density of LEDs was studied.
A grazing incidence x-ray diffraction with a synchrotron radiation and a cross-sectional high-resolution transmission electron microscopy were performed on the sapphire surface nitrided at 1080°C for 30min. The thickness of the nitrided layer was about 2nm. It was found out that the wurtzite, zinc-blende, and 30° rotated zinc-blende aluminum nitrides were formed on the sapphire surface. The 30° rotated zb-AlN formed the incoherent interface and has higher activation energy of formation, while the nonrotated zb-AlN formed the coherent interface.
Free-standing GaN layers were successfully prepared by self lift-off process. Single crystalline ZnO buffer layer and GaN layer were successively grown on sapphire substrate by plasma assisted molecular beam epitaxy. Thick GaN film was grown on this template substrate for the realization of stress-free freestanding substrate by hydride vapor phase epitaxy. The a-axis and c-axis lattice constants of free-standing GaN were 3.189Å and 5.185Å, respectively. Peak positions of photoluminescence spectrum were D 0 X of 3.4715 eV and FX A of 3.4791 eV. These results suggest that the stress-free GaN layers were successfully prepared by self lift-off process.
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