Elementary particles such as electrons or photons are frequent subjects of wave-nature-driven investigations, unlike collective excitations such as phonons. The demonstration of wave-particle crossover, in terms of macroscopic properties, is crucial to the understanding and application of the wave behaviour of matter. We present an unambiguous demonstration of the theoretically predicted crossover from diffuse (particle-like) to specular (wave-like) phonon scattering in epitaxial oxide superlattices, manifested by a minimum in lattice thermal conductivity as a function of interface density. We do so by synthesizing superlattices of electrically insulating perovskite oxides and systematically varying the interface density, with unit-cell precision, using two different epitaxial-growth techniques. These observations open up opportunities for studies on the wave nature of phonons, particularly phonon interference effects, using oxide superlattices as model systems, with extensive applications in thermoelectrics and thermal management.

Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena are governed by an antiferromagnet instead of a ferromagnet. Here we report experimental observation of the anisotropic magnetoresistance in an antiferromagnetic semiconductor Sr 2 IrO 4 . Based on ab initio calculations, we associate the origin of the phenomenon with large anisotropies in the relativistic electronic structure. The antiferromagnet film is exchange coupled to a ferromagnet, which allows us to reorient the antiferromagnet spin-axis in applied magnetic fields via the exchange spring effect. We demonstrate that the semiconducting nature of our AFM electrode allows us to perform anisotropic magnetoresistance measurements in the currentperpendicular-to-plane geometry without introducing a tunnel barrier into the stack. Temperature-dependent measurements of the resistance and anisotropic magnetoresistance highlight the large, entangled tunabilities of the ordinary charge and spin-dependent transport in a spintronic device utilizing the antiferromagnet semiconductor.

A new orthorhombic phase of the multiferroic BiFeO3 has been created via strain engineering by growing it on a NdScO(3)(110)(o) substrate. The tensile-strained orthorhombic BiFeO3 phase is ferroelectric and antiferromagnetic at room temperature. A combination of nonlinear optical second harmonic generation and piezoresponse force microscopy revealed that the ferroelectric polarization in the orthorhombic phase is along the in-plane {110}(pc) directions. In addition, the corresponding rotation of the antiferromagnetic axis in this new phase was observed using x-ray linear dichroism.

LINGAPPA RANGARAJ, SIRIYARA J. SURESHA, CANCHI DIVAKAR, and VIKRAM JAYARAM Dense ZrB 2 -ZrC and ZrB 2 -ZrC x~0.67 composites have been produced by reactive hot pressing (RHP) of stoichiometric and nonstoichiometric mixtures of Zr and B 4 C powders at 40 MPa and temperatures up to 1600°C for 30 minutes. The role of Ni addition on reaction kinetics and densification of the composites has been studied. Composites of~97 pct relative density (RD) have been produced with the stoichiometric mixture at 1600°C, while the composite with 99 pct RD has been obtained with excess Zr at 1200°C, suggesting the formation of carbon deficient ZrC x that significantly aids densification by plastic flow and vacancy diffusion mechanism. Stoichiometric and nonstoichiometric composites have a hardness of~20 GPa. The grain sizes of ZrB 2 and ZrC x~0.67 are~0.6 and 0.4 lm, respectively, which are finer than those reported in the literature.