Stretchable conductive fibers have received significant attention due to their possibility of being utilized in wearable and foldable electronics. Here, highly stretchable conductive fiber composed of silver nanowires (AgNWs) and silver nanoparticles (AgNPs) embedded in a styrene–butadiene–styrene (SBS) elastomeric matrix is fabricated. An AgNW‐embedded SBS fiber is fabricated by a simple wet spinning method. Then, the AgNPs are formed on both the surface and inner region of the AgNW‐embedded fiber via repeated cycles of silver precursor absorption and reduction processes. The AgNW‐embedded conductive fiber exhibits superior initial electrical conductivity (σ0 = 2450 S cm−1) and elongation at break (900% strain) due to the high weight percentage of the conductive fillers and the use of a highly stretchable SBS elastomer matrix. During the stretching, the embedded AgNWs act as conducting bridges between AgNPs, resulting in the preservation of electrical conductivity under high strain (the rate of conductivity degradation, σ/σ0 = 4.4% at 100% strain). The AgNW‐embedded conductive fibers show the strain‐sensing behavior with a broad range of applied tensile strain. The AgNW reinforced highly stretchable conductive fibers can be embedded into a smart glove for detecting sign language by integrating five composite fibers in the glove, which can successfully perceive human motions.

A flexible pressure sensor with high performances is one of the promising candidates for achieving electronic skins (E‐skin) related to various applications such as wearable devices, health monitoring systems, and artificial robot arms. The sensitive response for external mechanical stimulation is fundamentally required to develop the E‐skin which imitates the function of human skin. The performance of capacitive pressure sensors can be improved using morphologies and structures occurring in nature. In this work, highly sensitive capacitive pressure sensors based on a porous structure of polydimethylsiloxane (PDMS) thin film, inspired on the natural multilayered porous structures seen in mushrooms, diatoms, and spongia offilinalis, have been developed and evaluated. A bioinspired porous dielectric layer is used, resulting in high‐performance pressure sensors with high sensitivity (0.63 kPa−1), high stability over 10 000 cycles, fast response and relaxation times, and extremely low‐pressure detection of 2.42 Pa. Additionally, the resulting pressure sensors are demonstrated to fabricate multipixel arrays, thus achieving successful real‐time tactile sensing of various touch shapes. The developed high‐performance flexible pressure sensors may open new opportunities for innovative applications in advanced human‐machine interface systems, robotic sensory systems, and various wearable health monitoring devices.

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Thermal atomic layer deposition (ALD) of metal has generally been achieved at high temperatures of around 300°C or at relatively low temperatures with highly reactive counter reactants, including plasma radicals and O 3 , which can induce severe damage to substrates. Here, the growth of metallic Pt layers by ALD at a low temperature of 80°C is achieved by using [(1,2,5,6-η)-1,5-hexadiene]-dimethyl-platinum(II) (HDMP) and O 2 as the Pt precursor and counter reactant, respectively. ALD results in the successful growth of continuous Pt layers at the low temperature without any reactive reactants owing to the low activation energy of the HDMP precursor for surface reactions. Because of the high reactivity of the precursor, the growth of a pure Pt layer is achieved on various thermally weak substrates, leading to the fabrication of high-performance conductive cotton fibers by ALD. A capacitive-type textile pressure sensor is successfully demonstrated by stacking elastomeric rubber-coated conductive cotton fibers perpendicularly and integrating them onto a fabric with a 7 × 8 array configuration to identify the features of the applied pressure, which can be effectively utilized as a new platform for future wearable and textile electronics. INTRODUCTIONAtomic layer deposition (ALD) has widely attracted considerable interest for various high technologies, such as semiconductor devices and display devices, 1-3 because of its superb ability to deposit ultrathin films with excellent controllability and conformality even on complex three-dimensional (3D) structures. 1-8 Based on these superior properties, ALD has been intensively studied for several applications. In particular, textile electronics using the ALD is one of the promising fields since several materials can be readily deposited at temperatures lower than 150°C by ALD, leading to the effective functionalization of thermally fragile substrates such as plastics, cellulose papers and polymeric textiles. [9][10][11][12] Chen et al. 13 demonstrated hydrophobic silk fabrics with a high laundering durability and robustness due to a TiO 2 coating deposited by ALD. However, in the case of metal ALD, since temperatures as high as 300°C are generally required to achieve successful deposition with the thermal energy of the precursor reactions, it is difficult to deposit conformal metal films onto thermally weak substrates using ALD, causing difficulties in a wide range of applications, including textile electronics. 14,15 To ensure successful metal ALD at low temperatures, ALD in which the