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Persistent luminescence phosphors are regarded as one of the promising candidates for optical storage media. However, most optical storages using phosphors can only realize single-bit-data recording, limiting the storage capacity....

ZrO 2 films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 ϫ 10 −3 Pa to 11ϫ 10 −3 Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064 nm Nd: yttritium-aluminumgarnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO 2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold values increased from 18.5 to 26.7 J / cm 2 for oxygen partial pressures varying from 3 ϫ 10 −3 Pa to 9 ϫ 10 −3 Pa, but decreased to 17.3 J / cm 2 in the case of 11ϫ 10 −3 Pa.