Silicon photonics has experienced phenomenal transformations over the last decade. In this paper, we present some of the notable advances in silicon-based passive and active optical interconnect components, and highlight some of our key contributions. Light is also cast on few other parallel technologies that are working in tandem with silicon-based structures, and providing unique functions not achievable with any single system acting alone. With an increasing utilization of CMOS foundries for silicon photonics fabrication, a viable path for realizing extremely low-cost integrated optoelectronics has been paved. These advances are expected to benefit several application domains in the years to come, including communication networks, sensing, and nonlinear systems.

An ultracompact silicon electro-optic modulator was experimentally demonstrated based on silicon photonic crystal (PhC) waveguides for the first time to our knowledge. Modulation operation was demonstrated by carrier injection into an 80μm-long silicon PhC waveguide of a Mach-Zehnder interferometer (MZI) structure. The π phase shift driving current, Iπ, across the active region is as low as 0.15mA, which is equivalent to a Vπ of 7.5mV when a 50Ω impedance-matched structure is applied. The modulation depth is 92% operating at 1567nm.

We design and fabricate a 320 nm slot for an electro-optic (E-O) polymer infiltrated silicon photonic crystal waveguide. Because of the large slot width, the poling efficiency of the infiltrated E-O polymer (AJCKL1/amorphous polycarbonate) is significantly improved. When coupled with the slow light effect from the silicon photonic crystal waveguide, an effective in-device r(33) of 735 pm/V, which to our knowledge is a record high, is demonstrated, which is ten times higher than the E-O coefficient achieved in thin film material. Because of this ultrahigh E-O efficiency, the V(π)L of the device is only 0.44 V mm, which is to our knowledge the best result of all E-O polymer modulators.

We demonstrate a 300 μm long silicon photonic crystal (PC) slot waveguide device for on-chip near-infrared absorption spectroscopy, based on the Beer-Lambert law for the detection of methane gas. The device combines slow light in a PC waveguide with high electric field intensity in a low-index 90 nm wide slot, which effectively increases the optical absorption path length. A methane concentration of 100 ppm (parts per million) in nitrogen was measured.

All-optical switches have been considered as a promising solution to overcome the fundamental speed limit of the current electronic switches. However, the lack of a suitable third-order nonlinear material greatly hinders the development of this technology. Here we report the observation of ultrahigh third-order nonlinearity about 0.45 cm2/GW in graphene oxide thin films at the telecommunication wavelength region, which is four orders of magnitude higher than that of single crystalline silicon. Besides, graphene oxide is water soluble and thus easy to process due to the existence of oxygen containing groups. These unique properties can potentially significantly advance the performance of all-optical switches.