Spin mixing conductance (SMC) at the ferromagnetic/non-magnetic material (FM/NM) interface governs the transport efficiency of the spin current. A high level of SMC is crucial for efficient spin injection and spin manipulation. Here, we report a reliable way to enhance the SMC at the FM/NM interface by rare-earth doping in the NM layer. As evidenced by the decreased saturation magnetization in permalloy (Py)/Cu–Nd structures, an induced magnetism in Nd is proposed, which is likely to be antiferromagnetically coupled to Py at the interface. By changing the doping content of Nd, the Py/Cu–Nd interface can be well designed, which gives rise to an effective tuning of the SMC from 0.37 × 1015 to 16.26 × 1015 cm−2. Such a tuning effect of SMC is suppressed by inserting a Cu spacer, demonstrating the key role of the antiferromagnetically coupled interface to the improved SMC. Our results highlight the significance of rare-earth materials in spin transport, expanding the design capability of energy-efficient spintronic devices.
Bulk PtBi2 has attracted much attention for its topological semi-metallic electronic properties and highly promising applications in spintronics. Here, we report large spin–orbit torque (SOT) efficiency in the sputtered PtBi2 alloy with the trigonal-phase. From spin–torque-induced ferromagnetic resonance measurements, the SOT efficiency of 5 nm PtBi2 is estimated to be ∼0.2. Moreover, the spin Hall conductivity of PtBi2 [∼1 × 105 ℏ/2e (Ω m)−1] is comparable to that of topological materials, such PtTe2 and Bi2Te3. The PtBi2 film has much lower resistance than that of Bi-based topological materials, which makes it a useful candidate for application. The results suggest that the PtBi2 alloy is promising for applications in magnetic memory and logic devices driven by SOT.
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