We present results looking into the feasibility of 100-nm Node imaging using KrF, 248nm, exposure technology. This possibility is not currently envisioned by the 1999 ITRS Roadmap which lists 5 possible options for this 2005 Node, not including KrF. We show that double-exposure strong phase-shift, combined with two mask OPC, is capable of correcting the significant proximity effects present for 100-nm Node imaging at these low k1 factors. We also introduce a new PSM Paradigm, dubbed "GRATEFUL", that can image aggressive 100-nm Node features without using OPC. This is achieved by utilizing an optimized "dense-only" imaging approach. The method also allows the re-use of a single PSM for multiple levels and designs, thus addressing the mask cost and turnaround time issues of concern in PSM technology.

Articles you may be interested inSpatial shaping for generating arbitrary optical dipole traps for ultracold degenerate gases Rev. Sci. Instrum. 85, 103106 (2014); 10.1063/1.4895676 Reducing the pattern redundancy in optical proximity correction modeling by analyzing the pattern linearity Optical lithography resolution enhancement methods are continuing to develop, driven by the semiconductor industry's requirements for imaging subwavelength feature sizes. In the phase shift area, pattern decomposition into multiple exposures has been found to be useful and is finding its way into production. Recently, layout construction based on dense fine-pattern imaging has received increasing interest. This type of approach can minimize the proximity and other spatial frequency effects that otherwise limit strong phase shift technologies. Simple fine-feature template masks are easier and cheaper to fabricate and inspect as well as offering the potential to be reused for multiple designs. In this article, imaging and process issues specific to dense phase shift patterns are explored both experimentally and through simulation. Progress is reported in applying our gratings of regular arrays and trim exposures for ultralarge scale integrated circuit lithography ͑GRATEFUL͒ imaging method to fine features in both x and y orientations. The use of a graytone trim mask to vary fine-feature dimensions in a dual-exposure, strong phase shift process has been explored. We have also studied multiple-exposure lithography using one mask and varying illumination between exposures.

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