The application of gas sensors in breath analysis is an important trend in the early diagnostics of different diseases including lung cancer, ulcers, and enteric infection. However, traditional methods of synthesis of metal oxide gas-sensing materials for semiconductor sensors based on wet sol-gel processes give relatively high sensitivity of the gas sensor to changing humidity. The sol-gel process leading to the formation of superficial hydroxyl groups on oxide particles is responsible for the strong response of the sensing material to this factor. In our work, we investigated the possibility to synthesize metal oxide materials with reduced sensitivity to water vapors. Dry synthesis of SnO2 nanoparticles was implemented in gas phase by spark discharge, enabling the reduction of the hydroxyl concentration on the surface and allowing the production of tin dioxide powder with specific surface area of about 40 m2/g after annealing at 610 °C. The drop in sensor resistance does not exceed 20% when air humidity increases from 40 to 100%, whereas the response to 100 ppm of hydrogen is a factor of 8 with very short response time of about 1 s. The sensor response was tested in mixtures of air with hydrogen, which is the marker of enteric infections and the marker of early stage fire, and in a mixture of air with lactate (marker of stomach cancer) and ammonia gas (marker of Helicobacter pylori, responsible for stomach ulcers).

In this work, we studied the formation of conductive silver lines with high aspect ratios (AR = thickness/width) > 0.1 using the modernized method of aerosol jet printing on a heated silicon substrate. The geometric (AR) and electrical (resistivity) parameters of the formed lines were investigated depending on the number of printing layers (1–10 layers) and the temperature of the substrate (25–300 °C). The AR of the lines increased as the number of printing layers and the temperature of the substrate increased. An increase in the AR of the lines with increasing substrate temperature was associated with a decrease in the ink spreading as a result of an increase in the rate of evaporation of nano-ink. Moreover, with an increase in the substrate temperature of more than 200 °C, a significant increase in the porosity of the formed lines was observed, and as a result, the electrical resistivity of the lines increased significantly. Taking into account the revealed regularities, it was demonstrated that the formation of silver lines with a high AR > 0.1 and a low electrical resistivity of 2–3 μΩ∙cm is advisable to be carried out at a substrate temperature of about 100 °C. The adhesion strength of silver films formed on a heated silicon substrate is 2.8 ± 0.9 N/mm2, which further confirms the suitability of the investigated method of aerosol jet printing for electronic applications.

A cost-effective, scalable and versatile method of preparing nano-ink without hazardous chemical precursors is a prerequisite for widespread adoption of printed electronics. Precursor-free synthesis by spark discharge is promising for this purpose. The synthesis of platinum nanoparticles (PtNPs) using a spark discharge under Ar, N2, and air has been investigated to prepare highly conductive nano-ink. The size, chemical composition, and mass production rate of PtNPs significantly depended on the carrier gas. Pure metallic PtNPs with sizes of 5.5 ± 1.8 and 7.1 ± 2.4 nm were formed under Ar and N2, respectively. PtNPs with sizes of 18.2 ± 9.0 nm produced using air consisted of amorphous oxide PtO and metallic Pt. The mass production rates of PtNPs were 53 ± 6, 366 ± 59, and 490 ± 36 mg/h using a spark discharge under Ar, N2, and air, respectively. It was found that the energy dissipated in the spark gap is not a significant parameter that determines the mass production rate. Stable Pt nano-ink (25 wt.%) was prepared only on the basis of PtNPs synthesized under air. Narrow (about 30 μm) and conductive Pt lines were formed by the aerosol jet printing with prepared nano-ink. The resistivity of the Pt lines sintered at 750 °C was (1.2 ± 0.1)·10−7 Ω·m, which is about 1.1 times higher than that of bulk Pt.