PEALD deposition was used to reduce the effective deposition temperature of SnO2 electron selective layers without compromising the performance of perovskite solar cells.
Formamidinium lead triiodide (FAPbI ) is considered as an alternative to methylammonium lead triiodide (MAPbI ) because of its lower band gap and better thermal stability. However, owing to the large size of FA cations, it is difficult to synthesize high-quality FAPbI thin films without the formation of an undesirable yellow phase. Smaller sized cations, such as MA and Cs, have been successfully used to suppress the formation of the yellow phase. Whereas FA and MA lead triiodide perovskite solar cells (PVSCs) have achieved power conversion efficiencies (PCEs) higher than 20 %, the PCEs of formamidinium and cesium lead triiodide (FA Cs PbI ) PVSCs have been only approximately 16.5 %. Herein, we report our examination of the main factors limiting the PCEs of (FA Cs PbI ) PVSCs. We find that one of the main limiting factors could be the small grain sizes (≈120 nm), which leads to relatively short carrier lifetimes. We further find that adding a small amount of lead thiocyanate [Pb(SCN) ] to the precursors can enlarge the grain size of (FA Cs PbI ) perovskite thin films and significantly increase carrier lifetimes. As a result, we are able to fabricate (FA Cs PbI ) PVSCs with significantly improved open-circuit voltages and fill factors and, therefore, enhanced PCEs. With an optimal 0.5 mol % Pb(SCN) additive, the average PCE is increased from 16.18±0.50 (13.45±0.78) % to 18.16±0.54 (16.86±0.63) % for planar FA Cs PbI PVSCs if measured under reverse (forward) voltage scans. The champion cell registers a PCE of 19.57 (18.12) % if measured under a reverse (forward) voltage scan, which is comparable to that of the best-performing MA-containing planar FA-based lead halide PVSCs.
Earth‐abundant Cu2BaSnS4 (CBTS) thin films exhibit a wide bandgap of 2.04–2.07 eV, a high absorption coefficient > 104 cm−1, and a p‐type conductivity, suitable as a top‐cell absorber in tandem solar cell devices. In this work, sputtered oxygenated CdS (CdS:O) buffer layers are demonstrated to create a good p–n diode with CBTS and enable high open‐circuit voltages of 0.9–1.1 V by minimizing interface recombination. The best power conversion efficiency of 2.03% is reached under AM 1.5G illumination based on the configuration of fluorine‐doped SnO2 (back contact)/CBTS/CdS:O/CdS/ZnO/aluminum‐doped ZnO (front contact).
We have discovered that films of carbon single wall nanotubes (SWNTs) make excellent back contacts to CdTe devices without any modification to the CdTe surface. Efficiencies of SWNT-contacted devices are slightly higher than otherwise identical devices formed with standard Au/Cu back contacts. The SWNT layer is thermally stable and easily applied with a spray process, and SWNT-contacted devices show no signs of degradation during accelerated life testing.
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