The possibility of electrodeposition of soft gold from a thiosulf ate-sulfite bath was explored for electronics applications. The bath does not contain cyanide, and it is operated at a near neutral pH and a mildly elevated temperature. The bath is stable, does not undergo spontaneous decomposition without the addition of any stabilizer, and yields gold deposits with a hardness sufficiently low for use as gold bumps on semiconductor devices. Factors affecting the hardness were investigated in detail. It is shown that the use of high concentrations of the complexing agents and/or the addition of thallium(I) ions decreases both hardness and sulfur content of the deposit. The lowest Vickers hardness values achieved were approximately 80 kg mm2 in the as-deposited state and 50 kg mm2 after annealing at 350°C for 30 mm in air. The relationship between hardness and microstructure of the deposit was also examined.* Electrochemical Society Active Member.
Electroless gold deposition is known to take place on Ni-based substrates even when the conventional reducing agent is excluded from the autocatalytic bath containing thiosulfate and sulfite as ligands for gold ions. It is shown in this paper that the reaction of gold deposition from this bath on electroless Ni-B substrate is not autocatalytic but, instead, proceeds primarily by the mechanism of substrate catalysis with galvanic displacement playing a secondary role. It was established that sulfite serves as the reducing agent for the substrate-catalyzed gold deposition reaction.
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