No abstract

No abstract

Poly-(dimethylsiloxane) (PDMS) has been used as a negative friction layer in triboelectric nanogenerator (TENG) owing to its high electronegativity and flexibility. With advantage of the PDMS, various materials design to...

No abstract

A method for significantly increasing the growth rates (GRs) of high-k oxide thin films grown via plasmaenhanced atomic layer deposition (PE-ALD) by enhancing the plasma density through the addition of Ar gas to the O 2 plasma oxidant was developed. This approach led to improvements of ∼60% in the saturation GRs of PE-ALD ZrO 2 , HfO 2 , and SiO 2 . Furthermore, despite the significantly higher GR enabled by PE-ALD, the mechanical and dielectric properties of the PE-ALD oxide films were similar or even superior to those of films grown via the conventional O 2 plasma process. Optical emission spectroscopy analyses in conjunction with theoretical calculation of the electron energy distribution function revealed that adding Ar gas to the O 2 plasma increased the density of high-energy electrons, thereby generating more O 2 plasma species, such as ions and radicals, which played a key role in improving the GRs and the properties of the films. This promising approach is expected to facilitate the high-volume manufacturing of films via PE-ALD, especially for use as gate insulators in thin-film transistor-based devices in the display industry. KEYWORDS: atomic layer deposition, O 2 /Ar plasma, oxide thin films, enhanced growth rates, high-energy electron temperature, increased plasma density