We report the first direct observation of the oxygen-isotope ((16)O/(18)O) effect on the in-plane penetration depth lambda(ab) in a nearly optimally doped YBa(2)Cu(3)O(7-delta) film using the novel low-energy muon-spin rotation technique. Spin-polarized low-energy muons are implanted in the film at a known depth z beneath the surface and process in the local magnetic field B(z). This feature allows us to measure directly the profile B(z) of the magnetic field inside the superconducting film in the Meissner state and to make a straightforward determination of lambda(ab). A substantial isotope shift Delta lambda(ab)/lambda(ab)=2.8(1.0)% at 4 K is observed, implying that the in-plane effective supercarrier mass m*(ab) is oxygen-isotope dependent with Delta m*(ab)/m*(ab)=5.5(2.0)%. These results are in good agreement with magnetization measurements on powder samples.
We have used the technique of low energy muon spin rotation to measure the local magnetic field profile B(z) beneath the surface of a lead film maintained in the Meissner state (z depth from the surface, z less, similar 200 nm). The data unambiguously show that B(z) clearly deviates from an exponential law and represent the first direct, model independent proof for a nonlocal response in a superconductor.
Implanting fully polarized low energy muons on the nanometer scale beneath the surface of a superconductor in the Meissner state enabled us to probe the evanescent magnetic field profile B(z) (0 < z 200nm measured from the surface). All the investigated samples [Nb: κ ≃ 0.7(2), Pb:κ ≃ 0.6(1), Ta: κ ≃ 0.5(2)] show clear deviations from the simple exponential B(z) expected in the London limit, thus revealing the non-local response of these superconductors. From a quantitative analysis within the Pippard and BCS models the London penetration depth λL is extracted. In the case of Pb also the clean limit coherence length ξ0 is obtained. Furthermore we find that the temperature dependence of the magnetic penetration depth follows closely the two-fluid expectation 1/λ 2 ∝ 1 − (T /Tc) 4 . While B(z) for Nb and Pb are rather well described within the Pippard and BCS models, for Ta this is only true to a lesser degree. We attribute this discrepancy to the fact that the superfluid density is decreased by approaching the surface on a length scale ξ0. This effect, which is not taken self-consistently into account in the mentioned models, should be more pronounced in the lowest κ regime consistently with our findings.
The formation of hydrogenlike muonium (Mu) has been studied as a function of implantation energy in intrinsic Si, thin films of condensed van der Waals gases (N2, Ne, Ar, Xe), fused and crystalline quartz, and sapphire. By varying the initial energy of positive muons (mu+) between 1 and 30 keV the number of electron-hole pairs generated in the ionization track of the mu+ can be tuned between a few and several thousand. The results show the strong suppression of the formation of those Mu states that depend on the availability of excess electrons. This indicates that the role of H-impurity states in determining electric properties of semiconductors and insulators depends on the way in which atomic H is introduced into the material.
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