The orthorhombic perovskite NaOsO3 undergoes a continuous metal-insulator transition (MIT), accompanied by antiferromagnetic (AFM) order at TN = 410 K, suggested to be an example of the rare Slater (itinerant) MIT. We study this system using ab initio and related methods, focusing on the origin and nature of magnetic ordering and the MIT. The rotation and tilting of OsO6 octahedra in the GdFeO3 structure result in moderate narrowing the band width of the t2g manifold, but sufficient to induce flattening of bands and AFM order within the local spin density approximation (LSDA), where it remains metallic but with a deep pseudogap. Including on-site Coulomb repulsion U , at Uc ≈ 2 eV a MIT occurs only in the AFM state. Effects of spin-orbit coupling (SOC) on the band structure seem minor as expected for a half-filled t 3 2g shell, but SOC doubles the critical value Uc necessary to open a gap and also leads to large magnetocrystalline energy differences in spite of normal orbital moments no greater than 0.1µB . Our results are consistent with a Slater MIT driven by magnetic order, induced by a combination of structurally-induced band narrowing and moderate Coulomb repulsion, with SOC necessary for a full picture. Strong p − d hybridization reduces the moment, and when bootstrapped by the reduced Hund's rule coupling (proportional to the moment) gives a calculated moment of ∼1 µB, consistent with the observed moment and only a third of the formal d 3 value. We raise and discuss one important question: since this AFM ordering is at q=0 (in the 20 atom cell) where nesting is a moot issue, what is the microscopic driving force for ordering and the accompanying MIT?
The layered square-planar nickelates, Ndn+1NinO2n+2, are an appealing system to tune the electronic properties of square-planar nickelates via dimensionality; indeed, superconductivity was recently observed in Nd6Ni5O12 thin films. Here, we investigate the role of epitaxial strain in the competing requirements for the synthesis of the n = 3 Ruddlesden-Popper compound, Nd4Ni3O10, and subsequent reduction to the square-planar phase, Nd4Ni3O8. We synthesize our highest quality Nd4Ni3O10 films under compressive strain on LaAlO3 (001), while Nd4Ni3O10 on NdGaO3 (110) exhibits tensile strain-induced rock salt faults but retains bulk-like transport properties. A high density of extended defects forms in Nd4Ni3O10 on SrTiO3 (001). Films reduced on LaAlO3 become insulating and form compressive strain-induced c-axis canting defects, while Nd4Ni3O8 films on NdGaO3 are metallic. This work provides a pathway to the synthesis of Ndn+1NinO2n+2 thin films and sets limits on the ability to strain engineer these compounds via epitaxy.
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