Monolayer VSe 2 , featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d 1 electronic configuration in monolayer VSe 2 grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe 2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets. Endowed by the many possible combinations of their constituting elements, two-dimensional transition-metal dichalcogenides (2D-TMDs) can exhibit a multitude of exotic properties. [1, 2] For the much-studied group-VI 2D semiconductors, these include coupled spin and valley Received: ((will be filled in by the editorial staff)) Revised: ((will be filled in by the editorial staff))

Titanium nitride (TiN) is an interesting refractory metallic compound which could replace gold as an alternative plasmonic material, especially for high temperature and semiconductor compatible applications. However, reported plasmonic properties of TiN films are so far limited by conventional growth techniques, such as reactive sputtering. In this work, we adopt the nitrogen-plasma-assisted molecular-beam epitaxy (MBE) to grow single-crystalline, stoichiometric TiN films on sapphire substrates. The properties of as-grown TiN epitaxial films have been fully characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), spectroscopic ellipsometry (SE), and surface plasmon polariton (SPP) interferometry. We have confirmed that MBE-grown TiN films exhibit excellent plasmonic properties to replace gold in the visible and near-infrared spectral regions. Measuring the real and imaginary parts of dielectric function by SE, it is also found that TiN is better than gold in the shortwavelength range (<500 nm), where gold suffers from strong loss due to interband transition. Contrary to the recent theoretical prediction that air is not able to stabilize SPP modes at the TiN surface, our surface plasmon interferometry data clearly show the presence of propagating SPP modes at the TiN/air interface. To demonstrate the unique plasmonic properties of MBEgrown stoichiometric TiN, we have fabricated TiN metasurfaces for the visible-spectrum applications.

High quality single crystal ZrSiS as a theoretically predicted Dirac semimetal has been grown successfully using a vapor phase transport method. The single crystals of tetragonal structure are easy to cleave into perfect square-shaped pieces due to the van der Waals bonding between the sulfur atoms of the quintuple layers. Physical property measurement results including resistivity, Hall coefficient (RH), and specific heat are reported. The transport and thermodynamic properties suggest a Fermi liquid behavior with two Fermi pockets at low temperatures. At T = 3 K and magnetic field of Hǁc up to 9 Tesla, large magneto-resistance up to 8500% and 7200% for Iǁ(100) and Iǁ(110) were found. Shubnikov de Haas (SdH) oscillations were identified from the resistivity data, revealing the existence of two Fermi pockets at the Fermi level via the fast Fourier transform (FFT) analysis. The Hall coefficient (RH) showed hole-dominated carriers with a high mobility of 3.05 × 104 cm2 V−1 s−1 at 3 K. ZrSiS has been confirmed to be a Dirac semimetal by the Dirac cone mapping near the X-point via angle resolved photoemission spectroscopy (ARPES) with a Dirac nodal line near the Fermi level identified using scanning tunneling spectroscopy (STS).

Large size (∼2 cm) single crystals of layered MoTe2 in both 2H- and 1T′-types were synthsized using TeBr4 as the source of Br2 transport agent in chemical vapor transport growth. The crystal structures of the as-grown single crystals were fully characterized by X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, scanning tunneling microscopy (STM), and electrical resistivity (ρ) measurements. The resistivity ρ­(T), magnetic susceptibility χ­(T), and heat capacity C p(T) measurement results reveal a first order structural phase transition near ∼240 K for 1T′-MoTe2, which has been identified to be the orthorhombic Td-phase of MoTe2 as a candidate of Weyl semimetal. The STM study revealed different local defect geometries found on the surface of 2H- and Td-types of MoTe6 units in trigonal prismatic and distorted octahedral coordination, respectively.