5.6 μm quantum cascade lasers based on the Al0.78In0.22As/In0.69Ga0.31As active region composition with the measured pulsed room temperature wall plug efficiency of 28.3% are reported. Injection efficiency for the upper laser level of 75% was measured for the design by testing devices with variable cavity lengths. A threshold current density of 1.7 kA/cm2 and a slope efficiency of 4.9 W/A were measured for uncoated 3.15 mm × 9 μm lasers. Threshold current density and slope efficiency dependence on temperature in the range from 288 K to 348 K for the structure can be described by characteristic temperatures T0 ∼ 140 K and T1 ∼ 710 K, respectively.
Multi-watt continuous-wave room temperature operation with efficiency exceeding 10% has been demonstrated for quantum cascade lasers essentially in the entire mid-wave and long-wave infrared spectral regions. Along with interband cascade lasers, these devices are the only room-temperature lasers that directly convert electrical power into mid- and long-infrared optical power. In this paper, we review the progress in high-power quantum cascade lasers made over the last 10 years. Specifically, an overview of the most important active region, waveguide, and thermal design techniques is presented, and various aspects of die packaging for high-power applications are discussed. Prospects of power scaling with lateral device dimensions for reaching optical power level in the range from 10 W to 20 W are also analyzed. Finally, coherent and spectral beam-combining techniques for very high-power infrared platforms are discussed.
Lasing is reported for ridge-waveguide devices processed from a 40-stage InP-based quantum cascade laser structure grown on a 6-inch silicon substrate with a metamorphic buffer. The structure used in the proof-of-concept experiment had a typical design, including an AlInAs/InGaAs strain-balanced composition, with high strain both in quantum wells and barriers relative to InP, and an all-InP waveguide with a total thickness of 8 µm. Devices of size 3 mm x 40 µm, with a high-reflection back facet coating, emitted at 4.35 µm and had a threshold current of approximately 2.2 A at 78 K. Lasing was observed up to 170 K. Compared to earlier demonstrated InP-based quantum cascade lasers monolithically integrated onto GaAs, the same laser structure integrated on silicon had a lower yield and reliability. Surface morphology analysis suggests that both can be significantly improved by reducing strain for the active region layers relative to InP bulk waveguide layers surrounding the laser core.
Output facet temperatures of an uncoated high power continuous-wave quantum cascade laser (QCL) emitting at 8.5 μm were measured by using micro-Raman thermometry. The rate of the measured temperature changes with the injected electrical power increased from 6.5 K/W below the laser threshold to 12.3 K/W above the threshold. In addition, the measured temperature rise exceeded 220 K at an optical power of 0.9 W, well above the model projections based only on Joule heating. Facet oxidation was characterized via x-ray photoelectron spectroscopy measurements at incremental etch depths. While the oxidation reactions of InP and Ga were observed only at the surface level, the measured penetration of native Al2O3 was ∼24 nm. COMSOL thermal modeling demonstrated that light reabsorption by the native Al2O3 layer could well explain the additional temperature rise above the threshold. These results suggest that facet oxidation must be addressed to ensure the reliability of high-power long wave infrared QCLs.
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