Photonic integrated circuits (PICs) are considered as the way to make photonic systems or subsystems cheap and ubiquitous. PICs still are several orders of magnitude more expensive than their microelectronic counterparts, which has restricted their application to a few niche markets.

The worldwide first all-fiber THz time-domain spectrometer for operation at 1.5 microm is presented. Applications up to 3 THz are demonstrated. Key devices are photoconductive antennas based on novel LT InGaAs/InAlAs multi-layer structures.

Mesa-structuring of InGaAs/InAlAs photoconductive layers is performed employing a chemical assisted ion beam etching (CAIBE) process. Terahertz photoconductive antennas for 1.5 microm operation are fabricated and evaluated in a time domain spectrometer. Order-of-magnitude improvements versus planar antennas are demonstrated in terms of emitter power, dark current and receiver sensitivity.

Many time-domain terahertz applications require systems with high bandwidth, high signal-to-noise ratio and fast measurement speed. In this paper we present a terahertz time-domain spectrometer based on 1550 nm fiber laser technology and InGaAs photoconductive switches. The delay stage offers both a high scanning speed of up to 60 traces / s and a flexible adjustment of the measurement range from 15 ps -200 ps. Owing to a precise reconstruction of the time axis, the system achieves a high dynamic range: a single pulse trace of 50 ps is acquired in only 44 ms, and transformed into a spectrum with a peak dynamic range of 60 dB. With 1000 averages, the dynamic range increases to 90 dB and the measurement time still remains well below one minute. We demonstrate the suitability of the system for spectroscopic measurements and terahertz imaging.

Similarities and differences between photonic and microelectronic integration technology are discussed and a vision of the development of InP-based photonic integration in the coming decade is given

We investigate photoconductive terahertz (THz) emitters compatible with 1550 nm excitation for THz time-domain spectroscopy (TDS). The emitters are based on rhodium (Rh) doped InGaAs grown by molecular beam epitaxy. InGaAs:Rh exhibits a unique combination of ultrashort trapping time, high electron mobility, and high resistivity. THz emitters made of InGaAs:Rh feature an emitted THz power of 637 μW at 28 mW optical power and 60 kV/cm electrical bias field. In particular for a fiber coupled photoconductive emitter, this is an outstanding result. When these emitters are combined with InGaAs:Rh based receivers in a THz TDS system, 6.5 THz bandwidth and a record peak dynamic range of 111 dB can be achieved for a measurement time of 120 s.

We present first results on photoconductive THz emitters for 1.55µm excitation. The emitters are based on MBE grown In0.53Ga0.47As/In0.52Al0.48As multilayer heterostructures (MLHS) with high carrier mobility. The high mobility is achieved by spatial separation of photoconductive and trapping regions. Photoconductive antennas made of these MLHS are evaluated as THz emitters in a THz time domain spectrometer (THz TDS). The high carrier mobility and effective absorption significantly increases the optical-to-THz conversion efficiency with THz bandwidth in excess of 3 THz.

We present results on optimized growth temperatures and layer structure design of high mobility photoconductive Terahertz (THz) emitters based on molecular beam epitaxy grown In0.53Ga0.47As/In0.52Al0.48As multilayer heterostructures (MLHS). The photoconductive antennas made of these MLHS are evaluated as THz emitters in a THz time domain spectrometer and with a Golay cell. We measured a THz bandwidth in excess of 4 THz and average THz powers of up to 64 μW corresponding to an optical power-to-THz power conversion efficiency of up to 2 × 10−3.