The ability to tailor oxide heterointerfaces has led to novel properties in low‐dimensional oxide systems. A fundamental understanding of these properties is based on the concept of electronic charge transfer. However, the electronic properties of oxide heterointerfaces crucially depend on their ionic constitution and defect structure: ionic charges contribute to charge transfer and screening at oxide interfaces, triggering a thermodynamic balance of ionic and electronic structures. Quantitative understanding of the electronic and ionic roles regarding charge‐transfer phenomena poses a central challenge. Here, the electronic and ionic structure is simultaneously investigated at the prototypical charge‐transfer heterointerface, LaAlO3/SrTiO3. Applying in situ photoemission spectroscopy under oxygen ambient, ionic and electronic charge transfer is deconvoluted in response to the oxygen atmosphere at elevated temperatures. In this way, both the rich and variable chemistry of complex oxides and the associated electronic properties are equally embraced. The interfacial electron gas is depleted through an ionic rearrangement in the strontium cation sublattice when oxygen is applied, resulting in an inverse and reversible balance between cation vacancies and electrons, while the mobility of ionic species is found to be considerably enhanced as compared to the bulk. Triggered by these ionic phenomena, the electronic transport and magnetic signature of the heterointerface are significantly altered.

New heteroleptic rhenium­(I) compounds, [fac-Re­(I)­(CO)3(L)] (e.g., L= tfb-dmpda, (N,N-(4,4,4-trifluorobut-1-en-3-on)-dimethyl propylene diamine)), containing anionic and neutral ligands act as efficient precursors to grow polycrystalline rhenium nitride (ReN) films by their vapor phase deposition at 600 °C. Deposition of ReN films under an external magnetic field showed an orientation effect with preferred growth of crystallites along ⟨100⟩ direction. Rhenium complexes reported here unify high stability and reactivity in a single molecule through a Janus-type coordination around a Re center, constituted by a chelating tridentate ligand and three carbonyl groups imparting a facial geometry. Single-crystal diffraction analysis confirmed the structural integrity of the new rhenium compounds. The rigidity of molecular framework was validated in solution via 1D and 2D NMR spectroscopy, in the gas phase via mass spectrometry, and in the solid-state by thermogravimetric analysis and differential scanning calorimetry studies. The analytical data showed that pre-existent Re–N bonds in [fac-Re­(I)­(CO)3(L)] facilitated low-temperature formation of crystalline ReN deposits confirmed by grazing angle X-ray diffraction analysis. The surface chemical composition and the uniformity of microstructure were provided by X-ray photoelectron spectroscopy (XPS) and scanning and transmission electron microscopy (SEM/TEM), respectively.

We provide insights into the influence of surface termination on the oxygen vacancy incorporation for the perovskite model material SrTiO3 during annealing in reducing gas environments. We present a novel approach to control to tailor the oxygen vacancy formation by controlling the termination. We prove that a SrO-termination can inhibit the incorporation of oxygen vacancies across the (100)-surface and apply this to control their incorporation during thin film growth. Utilizing the conducting interface between LaAlO3 and SrTiO3, we could tailor the oxygen-vacancy based conductivity contribution by the level of SrO termination at the interface. Impact StatementFor the first time the termination dependent oxygen exchange kinetics are reported for the perovskite model material SrTiO 3 and applied to the 2D electron gas model system LaAlO 3 /SrTiO 3 .

In the family of functional oxide materials, the interface between LaAlO 3 and SrTiO 3 (LAO/STO) is an interesting example, as both materials are largebandgap insulators in their bulk state but give rise to a confined 2D electron gas (2DEG) when combined through thin-film deposition. While this 2DEG exhibits remarkable properties, its experimental investigation is mostly limited to destructive or non-local (i.e. averaging over larger areas) methods until recently. Scanning near-field optical microscopy is shown to overcome this limitation, detecting buried 2DEGs by using highly confined optical nearfields. Here, a full spectroscopic approach with phonon-enhancement and simulations based on the finite dipole model is combined to extract quantitative electronic properties of the interfacial LAO/STO 2DEG. This threefold improvement compared to previous work will enable the quantitative nanoscale, non-destructive, sub-surface analysis of complex oxide thin films and interfaces, as well as similar heterostructures.

has therefore become one of the most important strides in oxide electronics, [6,7] but also in the design of epitaxial Li-ion batteries [8-11] and water splitting catalysts. [12-14] A prototype-and supposedly simple-case is the heterojunction of a transition metal oxide with a high work function metal such as Pt, forming Schottky-type transport barriers, which promote diode-like device characteristics, functional in electronic [1-4,15-21] and photonic concepts. [22-25] While Schottky-type transport barriers typically result from electronic charge transfer from the metal-oxide to the metal, complex oxides also offer a wide variety of mobile ionic defects. These provide additional ionic charges that affect the electronic charge screening within the Schottky contact. [17,26,27] The Pt/Nb:SrTiO 3 heterojunction is a prominent example, as its interfacial contact resistance results in a (fairly simple) metal-insulator-metal (MIM) structure, possessing rectifying I(V)characteristics, memristive switching behavior, [1,4,5,17,28] photo-catalytic activity [22] and sensor characteristics. [29,30] These properties are highly sensitive to the ionic constitution of the heterojunction's interface. To this end, the resistance switching behavior of these junctions can be attributed primarily to oxygen (vacancy) Heterojunctions between high-work-function metals and metal oxides typically lead to Schottky-type transport barriers resulting from charge transfer between the neighboring materials. These yield versatile electronic functionality exploited for current rectification, memristive behavior, or photocatalysis. Height, width, and shape of the interfacial transport barrier are strongly affected by charge screening via ionic defects, which are often extremely difficult to probe. The ionic nature of a variable contact resistance in heterojunctions between Nb-doped SrTiO 3 (Nb:SrTiO 3) and platinum is explored. A control of cationic vacancy defects at the interface is achieved by different annealing procedures in oxidizing and reducing conditions before establishing Pt/Nb:SrTiO 3 heterojunctions. Detailed analysis of electronic transport across the heterojunctions reveal significantly varied transport barriers resulting from the cationic defect structure at the interface. These findings are supported by conductive-tip atomic force microscopy and in situ photoemission spectroscopy showing diminished conductivity of the Nb:SrTiO 3 surface and the formation of an insulating surface skin layer after oxygenation. At high doping level, oxygen stoichiometry cannot explain the observed behavior. The increased transport barrier height is therefore linked to strontium vacancy defects. The tailored cation disorder yields access to the ionic control of electronic transport in functional oxide heterojunctions.