Theoretical and practical issues concerning the nonlinear dynamic modelling of electron devices are discussed in this article. All the different dynamic phenomena, which are important for the description of the device behaviour, are comprehensively dealt with by means of a unified mathematical derivation. In particular, both the "fast" dynamics associated with charge-storage phenomena at high operating frequencies and the "slow" dynamics of low-frequency dispersion, due to device self-heating and "charge-trapping" effects in deepbulk and surface regions, are simultaneously taken into account. The result is an empirical, technology-independent and nonquasi-static model of electron devices, suitable for a simple and reliable identification procedure and based on conventional measurements of static characteristics and bias-and frequency-dependent small-signal parameters. The model implementation in the framework of commercially available CAD tools is also outlined in this article. Experimental validation, based on a GaAs p-HEMT, is also presented.
A k i a d -A general-purpose, technology-independenl behavioral model is adopted for the intermodulation performance prediction of PHEMT devices. The model can be easily identified since its nonlinear functions are directly related to conventional DC and small-signal differential parameter measurements. Experimental resulta which confirm the model accuracy at high operating frequencies are provided in the paper.
Abstract-Low-frequency (LF) dispersive phenomena due to device self-heating and/or the presence of "traps" (i.e., surface state densities and bulk spurious energy levels) must be taken into account in the large-signal dynamic modeling of III-V field-effect transistors when accurate performance predictions are pursued, since these effects cause important deviations between direct current (dc) and dynamic drain current characteristics. In this paper, a new model for the accurate characterization of these phenomena above their cutoff frequencies is presented, which is able to fully exploit, in the identification phase, large-signal current-voltage ( -) measurements carried out under quasi-sinusoidal regime using a recently proposed setup.
Low-frequency dispersive phenomena due to self-heating and/or "traps" (that is, surface-state densities and deep-level traps) cause important dynamic deviations in the I/V characteristics of III-V devices and they must be taken into account when an accurate large-signal dynamic model is needed. To this end, different low-frequency dispersive I/V models have been proposed by the research community and, quite often, a characterization based on pulsed I/V measurement systems has been suggested as the most appropriate for the identification of model parameters. Unfortunately, besides requiring special-purpose setups, pulsed characterization may suffer from some drawbacks, as discussed in this article. As an alternative, a simple large-signal measurement setup is presented here, which is based on low-frequency sinusoidal excitations and can be easily implemented by means of conventional general-purpose laboratory instrumentation. The proposed setup is successfully adopted in this article to identify the dispersive I/V characteristics of a GaAs PHEMT large-signal model providing excellent prediction of intermodulation distortion at Ka-band frequencies.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.