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International audienceHere we report on the synthesis of binary transition metal nitride electrodes based on titanium vanadium nitride (TiVN) thin films. These films were deposited by a method compatible with micro-electronic processes which consists of DC co-sputtering of vanadium (V) and titanium (Ti) targets. TiVN films with different Ti/V ratio were deposited. A dependence of the capacitance and the cycling stability with the Ti/V atomic ratio in the films was established. While V rich sample exhibits a Faradic behavior that limits its cycling ability despite a high areal and volumetric capacity, the addition of Ti in the film drastically improves the cycling ability with virtually no fade in capacitance after 10,000 cycles. Furthermore, a 1.1 Ti/V ratio leads to an areal capacitance up to 15 mF·cm− 2 in 1 M KOH electrolyte solution. Such electrodes shed light on the use of binary transition metal nitrides as candidate electrodes for micro-supercapacitor

A C C E P T E D M A N U S C R I P T ACCEPTED MANUSCRIPT2 We report fabrication of nanostructured zinc oxide (ZnO) thin films with improved optical properties through electrochemical anodization. The ZnO films were produced over silicon substrates via radio-frequency (RF) plasma magnetron sputtering technique followed by electrochemical treatment in potassium sulfate solution. After electrochemical treatment, the effect of applied potential on the band gap emission behavior of ZnO films was investigated for the potential drop of 1.8, 2.4 and 3.0 V against reference electrode of Ag/AgCl/0.1M KCl. Depending on these values, ZnO films with different degrees of nonporous morphology, improved structural quality and oxygenrich surface chemistry were obtained. The treatment also resulted in enhancement of band gap emission from ZnO films with the degree of enhancement depending on the applied potential. As compared to the as-deposited films, a maximum increase in the photoemission intensity by more than 2.2 times was noticed. In this paper, any changes in the structure, surface chemistry and band gap emission intensity of the RF sputter deposited films, as induced by the anodization treatment at differential potential values, are discussed.