The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of chromium-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e(2), accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.

No abstract

No abstract

Heterostructure based interface engineering has been proved an effective method for finding new superconducting systems and raising superconductivity transition temperature (T C ) 1-7 . In previous work on one unit-cell (UC) thick FeSe films on SrTiO 3 (STO) substrate, a superconducting-like energy gap as large as 20 meV 8 , was revealed by in situ scanning tunneling microscopy/spectroscopy (STM/STS). Angle resolved photoemission spectroscopy (ARPES) further revealed a nearly isotropic gap of above 15 meV, which closes at a temperature of 65 ± 5 K 9-11 . If this transition is indeed the superconducting transition, then the 1-UC FeSe represents the thinnest high T C superconductor discovered so far. However, up to date direct transport measurement of the 1-UC FeSe films has not been reported, mainly because growth of large scale 1-UC FeSe films ischallenging and the 1-UC FeSe films are too thin to survive in atmosphere. In this work, we successfully prepared 1-UC FeSe films on insulating STO substrates with non-superconducting FeTe protection layers. By direct transport and magnetic measurements, we provide definitive evidence for high temperature superconductivity in the 1-UC FeSe films with an onset T C above 40 K and a extremely large critical current density J C ~ 1.7×10 6 A/cm 2 at 2 K. Our work may pave the way to enhancing and tailoring superconductivity by interface engineering.The FeSe films and FeTe protection layer are grown by molecular beam epitaxy (MBE) (see Methods).

The breaking of time reversal symmetry in topological insulators may create previously unknown quantum effects. We observed a magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 topological insulator films grown by means of molecular beam epitaxy. Across the critical point, a topological quantum phase transition is revealed through both angle-resolved photoemission measurements and density functional theory calculations. We present strong evidence that the bulk band topology is the fundamental driving force for the magnetic quantum phase transition. The tunable topological and magnetic properties in this system are well suited for realizing the exotic topological quantum phenomena in magnetic topological insulators.

Topological insulators (TI) are a new class of quantum materials with insulating bulk enclosed by topologically protected metallic boundaries 1-3 . The surface states of three-dimensional TIs have spin helical Dirac structure 4-6 , and are robust against time reversal invariant perturbations. This extraordinary property is notably exemplified by the absence of backscattering by nonmagnetic impurities 7-9 and the weak antilocalization (WAL) of Dirac fermions 10-12 . Breaking the time reversal symmetry (TRS) by magnetic element doping is predicted to create a variety of exotic topological magnetoelectric effects 13-18 . Here we report transport studies on magnetically doped TI Cr-Bi 2 Se 3 . With increasing Cr concentration, the low temperature electrical conduction exhibits a characteristic crossover from WAL to weak localization (WL). In the heavily doped regime where WL dominates at the ground state, WAL reenters as temperature rises, but can be driven back to WL by strong magnetic field. These complex phenomena can be explained by a unified picture involving the evolution of Berry phase with the energy gap opened by magnetic impurities. This work demonstrates an effective way to manipulate the topological transport properties of the TI surface states by TRS-breaking perturbations.Bi 2 Se 3 is an ideal three-dimensional TI due to its large bulk energy gap (~ 300meV) and a Dirac point located well outside the bulk bands 19,20 . On the surface of magnetically doped Bi 2 Se 3 single crystals, Angle-resolved photoemission spectroscopy (ARPES) has revealed the opening of an energy gap at the Dirac point 21 and the creation of odd multiples of Dirac

Thin films of magnetically doped topological insulators Cr(0.22) (Bi(x) Sb(1-x) )(1.78) Te(3) are found to possess carrier-independent long-range ferromagnetic order with perpendicular magnetic anisotropy. The anomalous Hall resistance is greatly enhanced, up to one quarter of quantum Hall resistance, by depletion of the carriers. The results demonstrate this material as a promising system to realize the quantized anomalous Hall effect.

We report a transport study of ultrathin Bi 2 Se 3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low temperatures, the film resistance increases logarithmically with decreasing temperature, revealing an insulating ground state. The sharp increase of resistance with magnetic field, however, indicates the existence of weak antilocalization, which should reduce the resistance as temperature decreases. We show that these apparently contradictory behaviors can be understood by considering the electron interaction effect, which plays a crucial role in determining the electronic ground state of topological insulators in the two dimensional limit.