The optoelectronic properties of graphene attracted a lot of interest in recent years. Several demonstrations of integrated graphene based modulators, switches, detectors and non-linear devices have been reported. We present here a comprehensive study investigating the different design trade-offs involved in realizing in particular graphene based modulators and switches. We compare 4 representative hybrid graphenewaveguide configurations, focusing on optimizing their dimensions, the gate-oxide thickness, the polarization, the operating wavelength and contact definition. We study both static and dynamic behavior, defining a relevant figure of merit. We find that a 20 m device based on silicon waveguides should allow for 25 GBit/s modulation rate and an extinction ratio of 5 dB. A 200 m long SiN-device on the other hand should allow for 23dB extinction ratio and switching speeds down to 0.4 ns.
In this letter, we demonstrate a compact optical switch realized by integrating a graphene layer with a silicon photonic crystal cavity fabricated using deep UV immersion lithography and a novel transfer printing approach. A 17-dB extinction ratio and 0.75-nm shift in the cavity resonance are measured for a swing voltage of only 1.2 V. The graphene layer is limited to 1 × 5 µm in size. The experimental results are linked to a theoretical model and used to predict possible improvements to the design.
100-Gb/s single-channel optical data communication transceivers can provide a compact and cost-effective solution for the exponentially growing data-center traffic. One of the enabling technologies is electro-absorption-modulated single-mode lasers which are very compact, efficient, and fast. In this letter, such a transmitter integrated on a silicon photonics platform is demonstrated. While low loss and high contrast waveguides are provided by Si photonics, the gain and efficient electroabsorption are provided by the InP-based multi-quantum-well structure. A lumped electro-absorption modulator integrated with a distributed feedback laser is designed and fabricated in this platform. The epitaxial stack is identical for the laser and the modulator, which eases the fabrication process considerably. In this way, we successfully demonstrate 100-Gb/s single-channel electrical duobinary optical data transport over˜100 m of fiber with a bit error rate of 1.6e-3.
We present an InP-on-Si DFB laser integrated with electro-absorption modulators on each side, using a single epitaxial structure for laser and modulators. Two electrically isolated tapers couple the light to the Si waveguide, while simultaneously acting as modulators.
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