Magnetic skyrmions are chiral spin structures with a whirling configuration. Their topological properties, nanometre size and the fact that they can be moved by small current densities have opened a new paradigm for the manipulation of magnetization at the nanoscale. Chiral skyrmion structures have so far been experimentally demonstrated only in bulk materials and in epitaxial ultrathin films, and under an external magnetic field or at low temperature. Here, we report on the observation of stable skyrmions in sputtered ultrathin Pt/Co/MgO nanostructures at room temperature and zero external magnetic field. We use high lateral resolution X-ray magnetic circular dichroism microscopy to image their chiral Néel internal structure, which we explain as due to the large strength of the Dzyaloshinskii-Moriya interaction as revealed by spin wave spectroscopy measurements. Our results are substantiated by micromagnetic simulations and numerical models, which allow the identification of the physical mechanisms governing the size and stability of the skyrmions.

The propagation of magnetic domain walls induced by spin-polarized currents has launched new concepts for memory and logic devices. A wave of studies focusing on permalloy (NiFe) nanowires has found evidence for high domain-wall velocities (100 m s(-1); refs,), but has also exposed the drawbacks of this phenomenon for applications. Often the domain-wall displacements are not reproducible, their depinning from a thermally stable position is difficult and the domain-wall structural instability (Walker breakdown) limits the maximum velocity. Here, we show that the combined action of spin-transfer and spin-orbit torques offers a comprehensive solution to these problems. In an ultrathin Co nanowire, integrated in a trilayer with structural inversion asymmetry (SIA), the high spin-torque efficiency facilitates the depinning and leads to high mobility, while the SIA-mediated Rashba field controlling the domain-wall chirality stabilizes the Bloch domain-wall structure. Thus, the high-mobility regime is extended to higher current densities, allowing domain-wall velocities up to 400 m s(-1).