Thin films of the semiconducting compound Mg 2 Ge were deposited by magnetron cosputtering from source targets of high-purity Mg and Ge onto glass substrates at temperatures T s = 300°C to 700°C. X-ray diffraction shows that the Mg 2 Ge compound begins to form at a substrate temperature T s % 300°C. Films deposited at T s = 400°C to 600°C are single-phase Mg 2 Ge and have strong x-ray peaks. At higher T s the films tend to be dominated by a Ge-rich phase primarily due to the loss of magnesium vapor from the condensing film. At optimum deposition temperatures, 550°C to 600°C, films have an electrical conductivity r 600 K = 20 X À1 cm À1 to 40 X À1 cm À1 and a Seebeck coefficient a = 300 lV K À1 to 450 lV K À1 over a broad temperature range of 200 K to 600 K.
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