Deep-level transient spectroscopy (DLTS) was used to study electron traps in n-CdTe crystals. High-purity undoped and indium-doped samples were examined with Au Schottky barriers. Five levels were observed in CdTe:In, three of which are in good agreement with previously observed defect levels. The capture cross sections of these levels were measured. The energy levels relative to the conduction band were measured by isothermal DLTS. A single very deep level was observed in high-purity undoped CdTe. Modified CdTe surfaces were produced by brief (∼60 s) low-temperature (400 °C) annealing in air or argon. Schottky barriers made on these surfaces indicate a decrease in the near-surface carrier concentration. Changes in deep level concentrations were also observed. A very deep level (labeled IR5 in our study) (Ec =0.82 eV) is most changed by this process; annealing increases its concentration. It is suggested that IR5 is a native defect.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.