We report a large and nonvolatile bipolar-electric-field-controlled magnetization at room temperature in a Co(40)Fe(40)B(20)/Pb(Mg(1/3)Nb(2/3))(0.7)Ti(0.3)O(3) structure, which exhibits an electric-field-controlled looplike magnetization. Investigations on the ferroelectric domains and crystal structures with in situ electric fields reveal that the effect is related to the combined action of 109° ferroelastic domain switching and the absence of magnetocrystalline anisotropy in Co(40)Fe(40)B(20). This work provides a route to realize large and nonvolatile magnetoelectric coupling at room temperature and is significant for applications.
We report a giant electric-field control of magnetization (M) as well as magnetic anisotropy in a Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) structure at room temperature, in which a maximum relative magnetization change (ΔM/M) up to 83% with a 90° rotation of the easy axis under electric fields were observed by different magnetic measurement systems with in-situ electric fields. The mechanism for this giant magnetoelectric (ME) coupling can be understood as the combination of the ultra-high value of anisotropic in-plane piezoelectric coefficients of (011)-cut PMN-PT due to ferroelectric polarization reorientation and the perfect soft ferromagnetism without magnetocrystalline anisotropy of CoFeB film. Besides the giant electric-field control of magnetization and magnetic anisotropy, this work has also demonstrated the feasibility of reversible and deterministic magnetization reversal controlled by pulsed electric fields with the assistance of a weak magnetic field, which is important for realizing strain-mediated magnetoelectric random access memories.
Since the revival of multiferroic laminates with giant magnetoelectric (ME) coefficients, a variety of multifunctional ME devices, such as sensor, inductor, filter, antenna etc. have been developed. Magnetoelastic materials, which couple the magnetization and strain together, have recently attracted ever-increasing attention due to their key roles in ME applications. This review starts with a brief introduction to the early research efforts in the field of multiferroic materials and moves to the recent work on magnetoelectric coupling and their applications based on both bulk and thin-film materials. This is followed by sections summarizing historical works and solving the challenges specific to the fabrication and characterization of magnetoelastic materials with large magnetostriction constants. After presenting the magnetostrictive thin films and their static and dynamic properties, we review micro-electromechanical systems (MEMS) and bulk devices utilizing ME effect. Finally, some open questions and future application directions where the community could head for magnetoelastic materials will be discussed.
The authors report on the magnetodielectric (MD) effect of Z-type hexaferrite Sr 3 Co 2 Fe 24 O 41 at various temperatures and frequencies. A fairly large negative MD effect was observed with a peak near room temperature and a maximum at low frequencies. Analysis suggests that the MD effect shows a quadratic dependence on magnetization. The results were discussed by considering the magnetic field induced change of transverse conical spin structure and spin-phonon coupling. This work is helpful for understanding the MD effect in materials with complicated spin structures.Recently magnetodielectric (MD) effect, defined as the change of dielectric constant accompanying magnetic phase transitions or with magnetic field, has attracted much attention due to the renaissance of research on multiferroic materials which involve magnetoelectric coupling. [1][2][3][4][5][6][7][8][9] The study of MD effect is important regarding the fundamental interest as well as potential applications. 9 Therefore, a lot of work on MD effect has been carried out in a variety of materials both theoretically and experimentally. [1][2][3][4][5][6][7][8][9] The key issue in the study of MD effect is the origin of magnetic control of dielectric property of materials. Several mechanisms have been proposed to account for the MD effect. 1,3,9 One of the interesting scenarios is the correlation between change of dielectric constant and the square of magnetization (De ¼ cM 2 ), 1 which was derived in the framework of Ginzburg-Landau theory for the second-order phase transition for ferroelectromagnet. This scenario has been used to interpret the MD effect in a number of ferromagnetic systems. 1,2,6,9 And even for antiferromagnetic system, this scenario is valid for MD effect induced by external magnetic field. 5 However, it was also shown that this scenario is not valid for Mn 3 O 4 (Ref. 4), which is believed due to some complex spin-spin correlation function for the magnetically ordered phase. So, it is interesting to explore the validity of this scenario in other systems, especially those with complicated spin structures. Moreover, the study on the frequency dependence of MD effect on magnetization and temperature dependence of c is still lacking. Recently, Kitagawa et al. reported that electric polarization can be induced in the Z-type hexaferrite Sr 3 Co 2 Fe 24 O 41 (SCFO) with a complicated spiral spin structure by low magnetic fields at room temperature, 10 and the direction of the induced polarization can be switched through a magnetoelectric annealing procedure, 11 which suggests an unusual non-volatile and low-power memory device. It is interesting to explore the correlation between change of dielectric constant and magnetization in the Z-type hexaferrite SCFO, which has not been reported so far. In this letter, the temperature and frequency dependence of MD effect was explored in Z-type hexaferrite SCFO with different magnetizations and the results were discussed by considering the magnetic field induced change of transverse conical spin s...
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.