Present address: Arizona State University, School of Electrical, Computer and Energy Engineering, 551 E. Tyler Mall, Tempe, AZ 85287, USA.Reducing wafer thickness while increasing power conversion efficiency is the most effective way to reduce cost per Watt of a silicon photovoltaic module. Within the European project 20 percent efficiency on less than 100-mm-thick, industrially feasible crystalline silicon solar cells ("20plms"), we study the whole process chain for thin wafers, from wafering to module integration and life-cycle analysis. We investigate three different solar cell fabrication routes, categorized according to the temperature of the junction formation process and the wafer doping type: p-type silicon high temperature, n-type silicon high temperature and n-type silicon low temperature. For each route, an efficiency of 19.5% or greater is achieved on wafers less than 100 mm thick, with a maximum efficiency of 21.1% on an 80-mm-thick wafer. The n-type high temperature route is then transferred to a pilot production line, and a median solar cell efficiency of 20.0% is demonstrated on 100-mm-thick wafers.
In contrast to traditional steady-state photoluminescence imaging (PLI), time-resolved photoluminescence imaging (TR-PLI) allows for a calibration-free measurement of the effective transient minority charge carrier lifetime t eff in a silicon sample. For transient photoluminescence measurements, the illumination source as well as the camera signal have to be modulated on a timescale in the order of t eff. Different approaches for camera signal modulation have been presented, including the use of a complementary metal-oxide-semiconductor (CMOS) camera or a rotating shutter wheel. In this work, the use of an InGaAs-based image intensifier unit as a fast optical shutter for TR-PLI was evaluated. Due to the fast switching times of the image intensifier, effective lifetimes down to 1/50 of the modulation period could be resolved reliably. Measurements under different illumination conditions allow for an injection-dependant analysis of t eff and comparison to photoconductance decay measurements.
This paper describes power loss calibration procedures with implemented emissivity correction. The determination of our emissivity correction matrix does neither rely on blackbody reference measurements nor on the knowledge of any sample temperatures. To describe the emissivity-corrected power calibration procedures in detail, we review the theory behind lock-in thermography and show experimentally that the lock-in signal is proportional to the power dissipation in the solar cell. Experiments show the successful application of our emissivity correction procedure, which significantly improves the informative value of lock-in thermography images and the reliability of the conclusions drawn from these images
The material quality of multicrystalline silicon is influenced by crystal defects and contaminations like transition metal precipitates. During solar processing these defects can be restructured and change their electrical activity. The purpose of this work is to study the impact of different solar cell processing steps on the distribution and electric activity of transition metal precipitates like iron and copper. Therefore, neighbouring wafers of a multicrystalline silicon ingot, intentionally contaminated with iron and copper were investigated by IJXRF (X-Ray Fluorescence Microscopy) at the European Synchrotron Radiation Facility (ESRF) in Grenoble, France, to determine the distribution of transition metal precipitates. Afterwards, several solar cell processing steps were applied to these samples. The same sample areas were measured by IJXRF again to determine the influence of the applied processing steps on the observed transition metal precipitates. Therefore, a different behaviour of iron and copper precipitates could be observed as expected, due to their different dissolution and diffusion coefficients in silicon. Additionally, the same processing steps were applied to a second set of samples to evaluate the effect of processing steps on the minority charge carrier lifetime and the recombination activity of grain boundaries.
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