Recently, there has been considerable interest to study changes in the refractive index of highly excited direct-gap semiconductors below the band edge. Interference spectroscopy on thin crystal platelets represents an appropriate method for corresponding experimental investigations. First experiments of this kind were reported by Miiller et al. /1/ for CdS. But the purpose of these measurements was mainly a correct determination of the optical gain.Detailed investigations on the refractive index of highly excited CdS were carried out by Klingshirn and co-workers /2/. The thickness of the crystal platelets used was, however, of the order of some microns. From this two difficulties arose:
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